All MOSFET. STL140N6F7 Datasheet

 

STL140N6F7 Datasheet and Replacement


   Type Designator: STL140N6F7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 140 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 1520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: POWERFLAT5X6
 

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STL140N6F7 Datasheet (PDF)

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STL140N6F7

STL140N6F7DatasheetN-channel 60 V, 2.4 m typ., 140 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 packageFeaturesVDS RDS(on) max. ID PTOTOrder codeSTL140N6F7 60 V 2.8 m 140 A 125 W Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Logic level VGS(th)D(5, 6, 7, 8)8 7

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 stl140n4llf5.pdf pdf_icon

STL140N6F7

STL140N4LLF5N-channel 40 V, 0.00275 , 32 A, PowerFLAT (5x6)STripFET V Power MOSFETPreliminary dataFeaturesRDS(on) Type VDSS IDmaxSTL140N4LLF5 40 V 0.00275 32 A (1)1. The value is rated according Rthj-pcb. RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on)PowerFLAT ( 5x6 ) High avalanche ruggedness Low gate drive power loss

Datasheet: STH6N95K5-2 , STI100N10F7 , STI14NM50N , STI28N60M2 , STI34N65M5 , STI6N95K5 , STL10N65M2 , STL130N6F7 , STF13NM60N , STL33N60DM2 , STL7N60M2 , STL90N6F7 , STP10LN80K5 , STP10N80K5 , STP110N8F7 , STP130N6F7 , STP13N60DM2 .

History: OSG50R500AF | FQPF12N60 | IRF7101TR

Keywords - STL140N6F7 MOSFET datasheet

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