STP36N60M6 Datasheet and Replacement
Type Designator: STP36N60M6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.3 nS
Cossⓘ - Output Capacitance: 93 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO220
STP36N60M6 substitution
STP36N60M6 Datasheet (PDF)
stp36n60m6 stw36n60m6.pdf

STP36N60M6, STW36N60M6N-channel 600 V, 85 m typ., 30 A MDmesh M6 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP36N60M6 600 V 99 m 30 A STW36N60M6 33 Reduced switching losses 221 Lower R x area vs previous generation DS(on)1 Low gate input resistance 100% avalanche tested
stp36nf06l stb36nf06l.pdf

STP36NF06LSTB36NF06LN-channel 60V - 0.032 - 30A - TO-220 - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP36NF06L 60V
stp36n05l.pdf

STP36N05LSTP36N05LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP36N05L 50 V
stp36n06.pdf

STP36N06STP36N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP36N06 60 V
Datasheet: STP18N60DM2 , STP20N60M2-EP , STP23N80K5 , STP26N60M2 , STP26N65DM2 , STP28N60DM2 , STP33N60DM2 , STP33N60DM6 , RU6888R , STP43N60DM2 , STP45N60DM6 , STP4LN80K5 , STP4N90K5 , STP6N90K5 , STP8N120K5 , STP9N80K5 , STQ1HNK60R-AP .
History: GKI03080
Keywords - STP36N60M6 MOSFET datasheet
STP36N60M6 cross reference
STP36N60M6 equivalent finder
STP36N60M6 lookup
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STP36N60M6 replacement
History: GKI03080



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