All MOSFET. STP36N60M6 Datasheet

 

STP36N60M6 Datasheet and Replacement


   Type Designator: STP36N60M6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.3 nS
   Cossⓘ - Output Capacitance: 93 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO220
 

 STP36N60M6 substitution

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STP36N60M6 Datasheet (PDF)

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stp36n60m6 stw36n60m6.pdf pdf_icon

STP36N60M6

STP36N60M6, STW36N60M6N-channel 600 V, 85 m typ., 30 A MDmesh M6 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP36N60M6 600 V 99 m 30 A STW36N60M6 33 Reduced switching losses 221 Lower R x area vs previous generation DS(on)1 Low gate input resistance 100% avalanche tested

 8.1. Size:444K  st
stp36nf06l stb36nf06l.pdf pdf_icon

STP36N60M6

STP36NF06LSTB36NF06LN-channel 60V - 0.032 - 30A - TO-220 - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP36NF06L 60V

 8.2. Size:396K  st
stp36n05l.pdf pdf_icon

STP36N60M6

STP36N05LSTP36N05LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP36N05L 50 V

 8.3. Size:414K  st
stp36n06.pdf pdf_icon

STP36N60M6

STP36N06STP36N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP36N06 60 V

Datasheet: STP18N60DM2 , STP20N60M2-EP , STP23N80K5 , STP26N60M2 , STP26N65DM2 , STP28N60DM2 , STP33N60DM2 , STP33N60DM6 , RU6888R , STP43N60DM2 , STP45N60DM6 , STP4LN80K5 , STP4N90K5 , STP6N90K5 , STP8N120K5 , STP9N80K5 , STQ1HNK60R-AP .

History: GKI03080

Keywords - STP36N60M6 MOSFET datasheet

 STP36N60M6 cross reference
 STP36N60M6 equivalent finder
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