All MOSFET. STT626 Datasheet

 

STT626 Datasheet and Replacement


   Type Designator: STT626
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Qg ⓘ - Total Gate Charge: 25 nC
   Cossⓘ - Output Capacitance: 143 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: SOT223
 

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STT626 Datasheet (PDF)

 ..1. Size:134K  samhop
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STT626

GreenProductSTT626aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.60V 8A 27 @ VGS=10VSurface Mount Package.D G GSSTT SERIESS SOT - 223ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise not

 9.1. Size:133K  samhop
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STT626

GreenProductSTT622SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.76 @ VGS=10VSurface Mount Package.4.2A60V100 @ VGS=4.5V D G GSSTT SERIESS SOT - 223ABSOLUTE MAXIMUM RATINGS (TA=25

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Keywords - STT626 MOSFET datasheet

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