STP4LN80K5 PDF and Equivalents Search

 

STP4LN80K5 Specs and Replacement

Type Designator: STP4LN80K5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 11 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm

Package: TO220

STP4LN80K5 substitution

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STP4LN80K5 datasheet

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STP4LN80K5

STP4LN80K5 N-channel 800 V, 2.1 typ.,3 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I DS DS(on) D STP4LN80K5 800 V 2.6 3 A Industry s lowest R * area DS(on) Industry s best figure of merit (FoM) Ultra low-gate charge 100% avalanche tested Zener-protected Applications Switc... See More ⇒

Detailed specifications: STP26N60M2, STP26N65DM2, STP28N60DM2, STP33N60DM2, STP33N60DM6, STP36N60M6, STP43N60DM2, STP45N60DM6, IRF1405, STP4N90K5, STP6N90K5, STP8N120K5, STP9N80K5, STQ1HNK60R-AP, STS8DN6LF6AG, STU5N95K5, STU6N60DM2

Keywords - STP4LN80K5 MOSFET specs

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