STP4LN80K5 MOSFET. Datasheet pdf. Equivalent
Type Designator: STP4LN80K5
Marking Code: 4LN80K5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3.7 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 11 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
Package: TO220
STP4LN80K5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP4LN80K5 Datasheet (PDF)
..1. Size:714K st
stp4ln80k5.pdf
stp4ln80k5.pdf
STP4LN80K5 N-channel 800 V, 2.1 typ.,3 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I DS DS(on) DSTP4LN80K5 800 V 2.6 3 A Industrys lowest R * area DS(on) Industrys best figure of merit (FoM) Ultra low-gate charge 100% avalanche tested Zener-protected Applications Switc
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
