STP4LN80K5 Datasheet and Replacement
Type Designator: STP4LN80K5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 11 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
Package: TO220
STP4LN80K5 substitution
STP4LN80K5 Datasheet (PDF)
stp4ln80k5.pdf

STP4LN80K5 N-channel 800 V, 2.1 typ.,3 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I DS DS(on) DSTP4LN80K5 800 V 2.6 3 A Industrys lowest R * area DS(on) Industrys best figure of merit (FoM) Ultra low-gate charge 100% avalanche tested Zener-protected Applications Switc
Datasheet: STP26N60M2 , STP26N65DM2 , STP28N60DM2 , STP33N60DM2 , STP33N60DM6 , STP36N60M6 , STP43N60DM2 , STP45N60DM6 , NCEP15T14 , STP4N90K5 , STP6N90K5 , STP8N120K5 , STP9N80K5 , STQ1HNK60R-AP , STS8DN6LF6AG , STU5N95K5 , STU6N60DM2 .
History: BUZ325 | IRF1503LPBF | AON7430L
Keywords - STP4LN80K5 MOSFET datasheet
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History: BUZ325 | IRF1503LPBF | AON7430L



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