STQ1HNK60R-AP MOSFET. Datasheet pdf. Equivalent
Type Designator: STQ1HNK60R-AP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
|Id|ⓘ - Maximum Drain Current: 0.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 23.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
Package: TO92
STQ1HNK60R-AP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STQ1HNK60R-AP Datasheet (PDF)
stn1hnk60 stq1hnk60r-ap.pdf
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std1nk60 std1nk60-1 stq1hnk60r stn1hnk60.pdf
STD1NK60 - STD1NK60-1STQ1HNK60R - STN1HNK60N-CHANNEL 600V - 8 - 1A DPAK/TO-92/IPAK/SOT-223SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTD1NK60 600 V
std1nk60-1 std1nk60t4 std1nk60 std1nk60-1 stq1hnk60r stn1hnk60.pdf
STD1NK60 - STD1NK60-1STQ1HNK60R - STN1HNK60N-CHANNEL 600V - 8 - 1A DPAK/TO-92/IPAK/SOT-223SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTD1NK60 600 V
stq1hn60k3-ap.pdf
STQ1HN60K3-APN-channel 600 V, 6.7 typ., 0.4 A SuperMESH3 Power MOSFET in a TO-92 packageDatasheet - production dataFeaturesRDS(on) Order code VDS max ID PTOTSTQ1HN60K3-AP 600 V 8 0.4 A 3 W 100% avalanche tested32 Extremely high dv/dt capability1 Gate charge minimizedTO-92 Very low intrinsic capacitance Improved diode reverse recovery cha
stq1hnc60.pdf
STQ1HNC60N-CHANNEL 600V - 7 - 0.4A TO-92PowerMeshII MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTQ1HNC60 600 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
