STQ1HNK60R-AP MOSFET Datasheet: N-Ch, 600V, 0.4A. Full specification with pinout and replacement list

STQ1HNK60R-AP Specs and Replacement

   Type Designator: STQ1HNK60R-AP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 23.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: TO92

STQ1HNK60R-AP substitution

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STQ1HNK60R-AP datasheet

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STN1HNK60, STQ1HNK60R-AP Datasheet N-channel 600 V, 7.3 typ., 0.4 A SuperMESH Power MOSFETs in a SOT-223 and TO-92 packages 4 Features 23 1 VDS RDS(on) max. ID Order code Package SOT-223 STN1HNK60 SOT-223 600 V 8.5 0.4 A STQ1HNK60R-AP TO-92 Extremely high dv/dt capability 100% avalanche tested 3 2 Gate charge minimized 1 TO-92 (Ammopack) D(2, 4) Appli... See More ⇒

4.1. Size:424K st
std1nk60 std1nk60-1 stq1hnk60r stn1hnk60.pdf pdf_icon

STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8 - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID Pw STD1NK60 600 V ... See More ⇒

4.2. Size:427K st
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8.1. Size:1181K st
stq1hn60k3-ap.pdf pdf_icon

STQ1HN60K3-AP N-channel 600 V, 6.7 typ., 0.4 A SuperMESH3 Power MOSFET in a TO-92 package Datasheet - production data Features RDS(on) Order code VDS max ID PTOT STQ1HN60K3-AP 600 V 8 0.4 A 3 W 100% avalanche tested 3 2 Extremely high dv/dt capability 1 Gate charge minimized TO-92 Very low intrinsic capacitance Improved diode reverse recovery cha... See More ⇒