STS8DN6LF6AG MOSFET. Datasheet pdf. Equivalent
Type Designator: STS8DN6LF6AG
Marking Code: 8DN6LF6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 27 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SO8
STS8DN6LF6AG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STS8DN6LF6AG Datasheet (PDF)
sts8dn6lf6ag.pdf
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sts8dn3llh5.pdf
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STS8DN3LLH5Dual N-channel 30 V, 0.0155 , 10 A, SO-8STripFET V Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTS8DN3LLH5 30 V
sts8dnf3ll.pdf
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STS8DNF3LLDual N-channel 30V - 0.017 - 8A SO-8Low gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTS8DNF3LL 30V
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .