STW50N65DM2AG Specs and Replacement
Type Designator: STW50N65DM2AG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 38 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.087 Ohm
Package: TO247-4
STW50N65DM2AG substitution
- MOSFET ⓘ Cross-Reference Search
STW50N65DM2AG datasheet
stw50n65dm2ag.pdf
STW50N65DM2AG Automotive-grade N-channel 650 V, 0.070 typ., 38 A Power MOSFET MDmesh DM2 in a TO-247 package Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STW50N65DM2AG 650 V 0.087 38 A 300 W AEC-Q101 qualified 3 Fast-recovery body diode 2 Extremely low gate charge and input 1 capacitance Low on-resistance ... See More ⇒
stw50nb20.pdf
STW50NB20 N - CHANNEL 200V - 0.047 - 50A - TO-247 PowerMESH MOSFET TYPE VDSS RDS(on) ID STW50NB20 200 V ... See More ⇒
stw50n10.pdf
STW50N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW50N10 100 V ... See More ⇒
Detailed specifications: STW37N60DM2AG , STW40N90K5 , STW43N60DM2 , STW45N60DM2AG , STW45N60DM6 , STW48N60DM2 , STW48N60M6 , STW48N60M6-4 , 50N06 , STW56N65DM2 , STW63N65DM2 , STW65N65DM2AG , STW65N80K5 , STW70N60DM2 , STW70N60DM6-4 , STW70N65M2 , STW74NF30 .
Keywords - STW50N65DM2AG MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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