All MOSFET. STW50N65DM2AG Datasheet

 

STW50N65DM2AG Datasheet and Replacement


   Type Designator: STW50N65DM2AG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.087 Ohm
   Package: TO247-4
 

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STW50N65DM2AG Datasheet (PDF)

 ..1. Size:712K  st
 stw50n65dm2ag.pdf pdf_icon

STW50N65DM2AG

STW50N65DM2AG Automotive-grade N-channel 650 V, 0.070 typ., 38 A Power MOSFET MDmesh DM2 in a TO-247 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STW50N65DM2AG 650 V 0.087 38 A 300 W AEC-Q101 qualified 3 Fast-recovery body diode 2 Extremely low gate charge and input 1capacitance Low on-resistance

 8.1. Size:195K  st
 stw50nb20.pdf pdf_icon

STW50N65DM2AG

STW50NB20N - CHANNEL 200V - 0.047 - 50A - TO-247PowerMESH MOSFETTYPE VDSS RDS(on) IDSTW50NB20 200 V

 8.2. Size:307K  st
 stw50n10.pdf pdf_icon

STW50N65DM2AG

STW50N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW50N10 100 V

Datasheet: STW37N60DM2AG , STW40N90K5 , STW43N60DM2 , STW45N60DM2AG , STW45N60DM6 , STW48N60DM2 , STW48N60M6 , STW48N60M6-4 , 50N06 , STW56N65DM2 , STW63N65DM2 , STW65N65DM2AG , STW65N80K5 , STW70N60DM2 , STW70N60DM6-4 , STW70N65M2 , STW74NF30 .

History: BSS123W | IXFR24N100Q3 | SM8007NSF | 2SK3826 | AP93T03AGH-HF | MC11N005 | 2SK1384R

Keywords - STW50N65DM2AG MOSFET datasheet

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