All MOSFET. STW65N80K5 Datasheet

 

STW65N80K5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STW65N80K5
   Marking Code: 65N80K5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 446 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 46 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 92 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO247

 STW65N80K5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STW65N80K5 Datasheet (PDF)

 ..1. Size:707K  st
 stw65n80k5.pdf

STW65N80K5 STW65N80K5

STW65N80K5 N-channel 800 V, 0.07 typ., 46 A MDmesh K5 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTW65N80K5 800 V 0.08 46 A 446 W Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) 3 Ultra low gate charge 2 100% avalanche tested 1 Zener-protected

 8.1. Size:389K  st
 stw65n65dm2ag.pdf

STW65N80K5 STW65N80K5

STW65N65DM2AG Automotive-grade N-channel 650 V, 0.042 typ., 60 A Power MOSFET MDmesh DM2 in a TO-247 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STW65N65DM2AG 650 V 0.05 60 A 446 W Designed for automotive applications and 3AEC-Q101 qualified 2 Fast-recovery body diode 1 Extremely low gate charge and inpu

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: VSF013N10MS | STP32N06L | STP85NF55L | RT3K66M | FHF2N60A | 2N60G-TND-R

 

 
Back to Top