All MOSFET. STW65N80K5 Datasheet

 

STW65N80K5 Datasheet and Replacement


   Type Designator: STW65N80K5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 446 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 46 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO247
 

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STW65N80K5 Datasheet (PDF)

 ..1. Size:707K  st
 stw65n80k5.pdf pdf_icon

STW65N80K5

STW65N80K5 N-channel 800 V, 0.07 typ., 46 A MDmesh K5 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTW65N80K5 800 V 0.08 46 A 446 W Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) 3 Ultra low gate charge 2 100% avalanche tested 1 Zener-protected

 8.1. Size:389K  st
 stw65n65dm2ag.pdf pdf_icon

STW65N80K5

STW65N65DM2AG Automotive-grade N-channel 650 V, 0.042 typ., 60 A Power MOSFET MDmesh DM2 in a TO-247 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STW65N65DM2AG 650 V 0.05 60 A 446 W Designed for automotive applications and 3AEC-Q101 qualified 2 Fast-recovery body diode 1 Extremely low gate charge and inpu

Datasheet: STW45N60DM6 , STW48N60DM2 , STW48N60M6 , STW48N60M6-4 , STW50N65DM2AG , STW56N65DM2 , STW63N65DM2 , STW65N65DM2AG , IRF1404 , STW70N60DM2 , STW70N60DM6-4 , STW70N65M2 , STW74NF30 , STW75N60M6 , STW8N120K5 , STW9N80K5 , STWA20N95DK5 .

History: AP2338GN | SSM3K03TE | 2SK1746 | 2SK1774 | ASDM30N55E-R

Keywords - STW65N80K5 MOSFET datasheet

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