STW65N80K5 Specs and Replacement
Type Designator: STW65N80K5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 446 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 46 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO247
STW65N80K5 substitution
- MOSFET ⓘ Cross-Reference Search
STW65N80K5 datasheet
stw65n80k5.pdf
STW65N80K5 N-channel 800 V, 0.07 typ., 46 A MDmesh K5 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STW65N80K5 800 V 0.08 46 A 446 W Industry s lowest R x area DS(on) Industry s best figure of merit (FoM) 3 Ultra low gate charge 2 100% avalanche tested 1 Zener-protected ... See More ⇒
stw65n65dm2ag.pdf
STW65N65DM2AG Automotive-grade N-channel 650 V, 0.042 typ., 60 A Power MOSFET MDmesh DM2 in a TO-247 package Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STW65N65DM2AG 650 V 0.05 60 A 446 W Designed for automotive applications and 3 AEC-Q101 qualified 2 Fast-recovery body diode 1 Extremely low gate charge and inpu... See More ⇒
Detailed specifications: STW45N60DM6, STW48N60DM2, STW48N60M6, STW48N60M6-4, STW50N65DM2AG, STW56N65DM2, STW63N65DM2, STW65N65DM2AG, IRF1404, STW70N60DM2, STW70N60DM6-4, STW70N65M2, STW74NF30, STW75N60M6, STW8N120K5, STW9N80K5, STWA20N95DK5
Keywords - STW65N80K5 MOSFET specs
STW65N80K5 cross reference
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STW65N80K5 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: FCP067N65S3
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