STW75N60M6 MOSFET Datasheet: N-Ch, 600V, 72A. Full specification with pinout and replacement list

STW75N60M6 Specs and Replacement

Type Designator: STW75N60M6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 446 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 72 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: TO247

STW75N60M6 substitution

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STW75N60M6 datasheet

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STW75N60M6 Datasheet N-channel 600 V, 32 m typ., 72 A, MDmesh M6 Power MOSFET in a TO 247 package Features VDS RDS(on) max. ID Order code STW75N60M6 600 V 36 m 72 A Reduced switching losses 3 Lower RDS(on) per area vs previous generation 2 1 Low gate input resistance 100% avalanche tested TO-247 Zener-protected D(2, TAB) Applications Switchin... See More ⇒

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STB75N20 STP75N20 - STW75N20 N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS(on) ID STB75N20 200V ... See More ⇒