All MOSFET. STW75N60M6 Datasheet

 

STW75N60M6 Datasheet and Replacement


   Type Designator: STW75N60M6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 446 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 72 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO247
 

 STW75N60M6 substitution

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STW75N60M6 Datasheet (PDF)

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STW75N60M6

STW75N60M6DatasheetN-channel 600 V, 32 m typ., 72 A, MDmesh M6 Power MOSFET in a TO247 packageFeaturesVDS RDS(on) max. IDOrder codeSTW75N60M6 600 V 36 m 72 A Reduced switching losses3 Lower RDS(on) per area vs previous generation21 Low gate input resistance 100% avalanche testedTO-247 Zener-protectedD(2, TAB)Applications Switchin

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STW75N60M6

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STW75N60M6

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STW75N60M6

STB75N20STP75N20 - STW75N20N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB75N20 200V

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History: SDD05N70

Keywords - STW75N60M6 MOSFET datasheet

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