All MOSFET. STW75N60M6 Datasheet

 

STW75N60M6 Datasheet and Replacement


   Type Designator: STW75N60M6
   Marking Code: 75N60M6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 446 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.75 V
   |Id| ⓘ - Maximum Drain Current: 72 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 106 nC
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO247
 

 STW75N60M6 substitution

   - MOSFET ⓘ Cross-Reference Search

 

STW75N60M6 Datasheet (PDF)

 ..1. Size:535K  st
stw75n60m6.pdf pdf_icon

STW75N60M6

STW75N60M6DatasheetN-channel 600 V, 32 m typ., 72 A, MDmesh M6 Power MOSFET in a TO247 packageFeaturesVDS RDS(on) max. IDOrder codeSTW75N60M6 600 V 36 m 72 A Reduced switching losses3 Lower RDS(on) per area vs previous generation21 Low gate input resistance 100% avalanche testedTO-247 Zener-protectedD(2, TAB)Applications Switchin

 8.1. Size:398K  1
sth75n06 sth75n06fi stw75n06.pdf pdf_icon

STW75N60M6

 8.2. Size:398K  st
stw75n06.pdf pdf_icon

STW75N60M6

 8.3. Size:517K  st
stb75n20 stp75n20 stw75n20.pdf pdf_icon

STW75N60M6

STB75N20STP75N20 - STW75N20N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB75N20 200V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AO4485 | 6764 | IPD60R750E6 | KP775V | STB75NF20 | STP75N20 | HUF75617D3ST

Keywords - STW75N60M6 MOSFET datasheet

 STW75N60M6 cross reference
 STW75N60M6 equivalent finder
 STW75N60M6 lookup
 STW75N60M6 substitution
 STW75N60M6 replacement

 

 
Back to Top

 


 
.