STW8N120K5 MOSFET. Datasheet pdf. Equivalent

   Type Designator: STW8N120K5
   Marking Code: 8N120K5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.7 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 44 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO247

STW8N120K5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STW8N120K5 Datasheet (PDF)

..1. Size:274K st
stw8n120k5.pdf

STW8N120K5DatasheetN-channel 1200 V, 1.65 typ., 6 A, MDmesh K5 Power MOSFET in a TO-247 packageFeaturesVDS RDS(on) max. ID PTOTOrder codeSTW8N120K5 1200 V 2.00 6 A 130 W Industrys lowest RDS(on) x area3 Industrys best FoM (figure of merit)21 Ultra-low gate charge 100% avalanche testedTO-247 Zener-protectedD(2)Applications Switc

9.1. Size:406K 1
sth8n80 sth8n80fi stw8n80.pdf

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stw8nc90z.pdf

STW8NC90ZN-CHANNEL 900V - 1.1 - 7.6A TO-247Zener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTW8NC90Z 900 V

9.3. Size:175K st
stw8nb100.pdf

STW8NB100N-CHANNEL 1000V - 1.3 - 7.3ATO-247PowerMesh MOSFETTYPE VDSS RDS(on) IDSTW8NB100 1000V

9.4. Size:124K st
stw8n.pdf

STW8NA60STH8NA60FI N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW8NA60 600 V

9.5. Size:311K st
stw8nb90.pdf

STW8NB90STH8NB90FIN-CHANNEL 900V - 1.1 - 8 A TO-247/ISOWATT218PowerMesh MOSFETTYPE VDSS RDS(on) IDSTW8NB90 900 V

9.6. Size:422K st
stp8nk80z stp8nk80zfp stw8nk80z.pdf

STP8NK80Z - STP8NK80ZFPSTW8NK80ZN-channel 800V - 1.3 - 6.2A - TO-220 /TO-220FP/TO-247Zener-protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) IDSTP8NK80Z 800 V

9.7. Size:123K st
stw8na60.pdf