All MOSFET. VQ1000J Datasheet

 

VQ1000J Datasheet and Replacement


   Type Designator: VQ1000J
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 0.225 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   ton ⓘ - Turn-on Time: 7 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
   Package: DIP-14
 

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VQ1000J Datasheet (PDF)

 ..1. Size:58K  vishay
 2n7000 2n7002 vq1000j vq1000p bs170.pdf pdf_icon

VQ1000J

2N7000/2N7002, VQ1000J/P, BS170Vishay SiliconixN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)5 @ VGS = 10 V 0.8 to 3 0.22N70002N7002 7.5 @ VGS = 10 V 1 to 2.5 0.11560VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225BS170 5 @ VGS = 10 V 0.8 to 3 0.5FEATURES BENEFITS APPLICATIONSD

 0.1. Size:58K  vishay
 2n7000 2n7002 vq1000j-p bs170.pdf pdf_icon

VQ1000J

2N7000/2N7002, VQ1000J/P, BS170Vishay SiliconixN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)5 @ VGS = 10 V 0.8 to 3 0.22N70002N7002 7.5 @ VGS = 10 V 1 to 2.5 0.11560VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225BS170 5 @ VGS = 10 V 0.8 to 3 0.5FEATURES BENEFITS APPLICATIONSD

 9.1. Size:61K  vishay
 vn0808l-ls vq1006p.pdf pdf_icon

VQ1000J

VN0808L/LS, VQ1006PVishay SiliconixN-Channel 80- and 90-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)VN0808L 4 @ VGS = 10 V 0.8 to 2 0.380VN0808LS 4 @ VGS = 10 V 0.8 to 2 0.33VQ1006P 90 4 @ VGS = 10 V 0.8 to 2.5 0.4FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 3.6 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/

 9.2. Size:46K  vishay
 vq1001jp.pdf pdf_icon

VQ1000J

VQ1001J/PVishay SiliconixQuad N-Channel 30-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)1 @ VGS = 12 V 0.8 to 2.5 0.83VQ1001J30VQ1001P 1 @ VGS = 12 V 0.8 to 2.5 0.53FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 0.85 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/CMOSD Low Threshold: 1.4 V D Low-Voltage Operat

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Datasheet: STW74NF30 , STW75N60M6 , STW8N120K5 , STW9N80K5 , STWA20N95DK5 , STWA40N90K5 , STWA48N60DM2 , STWA48N60M2 , IRFB4115 , VQ1000P , IRF830L , IRF840AL , SIHFB20N50K , IRFD113 , SIHFP450 , SIHFP460 , SIHFP460A .

Keywords - VQ1000J MOSFET datasheet

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