VQ1000P MOSFET. Datasheet pdf. Equivalent

   Type Designator: VQ1000P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 0.225 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   tonⓘ - Turn-on Time: 7 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
   Package: DIP-14

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