SI3493DDV MOSFET. Datasheet pdf. Equivalent
Type Designator: SI3493DDV
Marking Code: BQ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 7.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 34.8 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 210 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: TSOP-6
SI3493DDV Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI3493DDV Datasheet (PDF)
si3493ddv.pdf
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Si3493DDVwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESTSOP-6 Single TrenchFET Gen III p-channel power MOSFETS4 RDS(on) rating at VGS = -1.8 VD5D 100 % Rg and UIS tested6 Material categorization: for definitions of compliance please see3www.vishay.com/doc?99912G2DAPPLICATIONS1 SD Battery management in mobile d
si3493dv.pdf
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Si3493DVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.027 at VGS = - 4.5 V - 7 TrenchFET Power MOSFET: 1.8 V Rated0.035 at VGS = - 2.5 V - 6.2- 20 21 Ultra-Low On-Resistance 0.048 at VGS = - 1.8 V - 5.2 Compliant to RoHS Directive 2002/95/EC
si3493bd.pdf
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Si3493BDVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)Definition0.0275 at VGS = - 4.5 V TrenchFET Power MOSFET- 8.0a PWM Optimized- 20 0.034 at VGS = - 2.5 V - 7.9 26.2 nC 100 % Rg Tested 0.045 at VGS = - 1.8 V - 2.2 Compliant to RoHS Directiv
si3493bdv.pdf
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Si3493BDVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)Definition0.0275 at VGS = - 4.5 V TrenchFET Power MOSFET- 8.0a PWM Optimized- 20 0.034 at VGS = - 2.5 V - 7.9 26.2 nC 100 % Rg Tested 0.045 at VGS = - 1.8 V - 2.2 Compliant to RoHS Directiv
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