All MOSFET. SI3993DV Datasheet

 

SI3993DV Datasheet and Replacement


   Type Designator: SI3993DV
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.133 Ohm
   Package: TSOP-6
 

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SI3993DV Datasheet (PDF)

 ..1. Size:197K  vishay
 si3993dv.pdf pdf_icon

SI3993DV

Si3993DVVishay SiliconixDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.133 at VGS = - 10 V - 2.2 TrenchFET Power MOSFET- 300.245 at VGS = - 4.5 V - 1.6 Symetrical Dual P-Channel Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Battery Switch for Porta

 8.1. Size:194K  vishay
 si3993cdv.pdf pdf_icon

SI3993DV

New ProductSi3993CDVVishay SiliconixDual P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.111 at VGS = - 10 V - 2.9 TrenchFET Power MOSFET- 30 2.7 nC0.188 at VGS = - 4.5 V - 2.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load

Datasheet: SI1078X , SI1900DL , SI1902DL , SI2308CDS , SI3440ADV , SI3460BDV , SI3469DV , SI3493DDV , RFP50N06 , SI4058DY , SI4062DY , SI4403DDY , SI4431BDY , SI4435FDY , SI4447DY , SI4804CDY , SI4848ADY .

History: SP8M3-TB | SSG4463P

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