SI4058DY MOSFET. Datasheet pdf. Equivalent
Type Designator: SI4058DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 280 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: SO-8
SI4058DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4058DY Datasheet (PDF)
si4058dy.pdf
Si4058DYwww.vishay.comVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) 100 % Rg and UIS tested0.026 at VGS = 10 V 10.3100 5.8 nC Material categorization:0.033 at VGS = 4.5 V 9.2for definitions of compliance please see www.vishay.com/doc?99912SO-8 SingleDD 5A
si4056dy.pdf
Si4056DYwww.vishay.comVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESSO-8 SingleD TrenchFET power MOSFETD 5D 6 100 % Rg and UIS testedD 78 Material categorization:for definitions of compliance please seewww.vishay.com/doc?999124G APPLICATIONS33SS2 D 2 DC/DC primary side switchSS11S Telecom / serverTop View
si4056dy.pdf
SMD Type MOSFET N-Channel MOSFET SI4056DY (KI4056DY)SOP-8 Features VDS (V) = 100V ID = 11.1 A (VGS = 10V)D RDS(ON) 23m (VGS = 10V)1.50 0.15 RDS(ON) 24m (VGS = 7.5V) RDS(ON) 31 m (VGS = 4.5V)G 1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateS Absolute Maximum Ratings Ta = 25Parameter Symbol Ra
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
