SI4058DY Datasheet and Replacement
Type Designator: SI4058DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 280 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: SO-8
- MOSFET Cross-Reference Search
SI4058DY Datasheet (PDF)
si4058dy.pdf

Si4058DYwww.vishay.comVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) 100 % Rg and UIS tested0.026 at VGS = 10 V 10.3100 5.8 nC Material categorization:0.033 at VGS = 4.5 V 9.2for definitions of compliance please see www.vishay.com/doc?99912SO-8 SingleDD 5A
si4056dy.pdf

Si4056DYwww.vishay.comVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESSO-8 SingleD TrenchFET power MOSFETD 5D 6 100 % Rg and UIS testedD 78 Material categorization:for definitions of compliance please seewww.vishay.com/doc?999124G APPLICATIONS33SS2 D 2 DC/DC primary side switchSS11S Telecom / serverTop View
si4056dy.pdf

SMD Type MOSFET N-Channel MOSFET SI4056DY (KI4056DY)SOP-8 Features VDS (V) = 100V ID = 11.1 A (VGS = 10V)D RDS(ON) 23m (VGS = 10V)1.50 0.15 RDS(ON) 24m (VGS = 7.5V) RDS(ON) 31 m (VGS = 4.5V)G 1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateS Absolute Maximum Ratings Ta = 25Parameter Symbol Ra
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: FQB20N06TM | NP180N04TUJ | SRT10N160LD | SM4186T9RL | NCE30P12BS | APT10021JFLL | SSW65R190S2
Keywords - SI4058DY MOSFET datasheet
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History: FQB20N06TM | NP180N04TUJ | SRT10N160LD | SM4186T9RL | NCE30P12BS | APT10021JFLL | SSW65R190S2



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