All MOSFET. SI4058DY Datasheet

 

SI4058DY MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI4058DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: SO-8

 SI4058DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4058DY Datasheet (PDF)

 ..1. Size:256K  vishay
 si4058dy.pdf

SI4058DY SI4058DY

Si4058DYwww.vishay.comVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) 100 % Rg and UIS tested0.026 at VGS = 10 V 10.3100 5.8 nC Material categorization:0.033 at VGS = 4.5 V 9.2for definitions of compliance please see www.vishay.com/doc?99912SO-8 SingleDD 5A

 9.1. Size:209K  vishay
 si4056dy.pdf

SI4058DY SI4058DY

Si4056DYwww.vishay.comVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESSO-8 SingleD TrenchFET power MOSFETD 5D 6 100 % Rg and UIS testedD 78 Material categorization:for definitions of compliance please seewww.vishay.com/doc?999124G APPLICATIONS33SS2 D 2 DC/DC primary side switchSS11S Telecom / serverTop View

 9.2. Size:1768K  kexin
 si4056dy.pdf

SI4058DY SI4058DY

SMD Type MOSFET N-Channel MOSFET SI4056DY (KI4056DY)SOP-8 Features VDS (V) = 100V ID = 11.1 A (VGS = 10V)D RDS(ON) 23m (VGS = 10V)1.50 0.15 RDS(ON) 24m (VGS = 7.5V) RDS(ON) 31 m (VGS = 4.5V)G 1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateS Absolute Maximum Ratings Ta = 25Parameter Symbol Ra

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History: SI8205A | FK4B0112 | MTN4N01Q8 | FDME1024NZT | IXFH12N100 | FQA11N90F109

 

 
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