SI4062DY Datasheet and Replacement
Type Designator: SI4062DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 21.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 105 nS
Cossⓘ - Output Capacitance: 1265 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: SO-8
SI4062DY substitution
SI4062DY Datasheet (PDF)
si4062dy.pdf

Si4062DYVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0042 at VGS = 10 V 32.1 Material categorization:For definitions of compliance please see60 0.0054 at VGS = 6 V 28.3 18.8 nCwww.vishay.com/doc?999120.0069 at VGS = 4.5 V 25APPLICATIONSS
Datasheet: SI1902DL , SI2308CDS , SI3440ADV , SI3460BDV , SI3469DV , SI3493DDV , SI3993DV , SI4058DY , IRF4905 , SI4403DDY , SI4431BDY , SI4435FDY , SI4447DY , SI4804CDY , SI4848ADY , SI4850BDY , SI4925BDY .
History: NTHS4101PT1G | STL70N10F3 | FDZ375P | 2SK538 | 2SK3541MGP | SFS12R08PNF
Keywords - SI4062DY MOSFET datasheet
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History: NTHS4101PT1G | STL70N10F3 | FDZ375P | 2SK538 | 2SK3541MGP | SFS12R08PNF



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