SI4062DY Specs and Replacement
Type Designator: SI4062DY
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 21.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 105 nS
Cossⓘ - Output Capacitance: 1265 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: SO-8
SI4062DY substitution
- MOSFET ⓘ Cross-Reference Search
SI4062DY datasheet
si4062dy.pdf
Si4062DY Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0042 at VGS = 10 V 32.1 Material categorization For definitions of compliance please see 60 0.0054 at VGS = 6 V 28.3 18.8 nC www.vishay.com/doc?99912 0.0069 at VGS = 4.5 V 25 APPLICATIONS S... See More ⇒
Detailed specifications: SI1902DL, SI2308CDS, SI3440ADV, SI3460BDV, SI3469DV, SI3493DDV, SI3993DV, SI4058DY, 5N65, SI4403DDY, SI4431BDY, SI4435FDY, SI4447DY, SI4804CDY, SI4848ADY, SI4850BDY, SI4925BDY
Keywords - SI4062DY MOSFET specs
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