SI4804CDY PDF and Equivalents Search

 

SI4804CDY Specs and Replacement

Type Designator: SI4804CDY

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 131 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: SO-8

SI4804CDY substitution

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SI4804CDY datasheet

 ..1. Size:89K  vishay
si4804cdy.pdf pdf_icon

SI4804CDY

New Product Si4804CDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 100 % Rg Tested RoHS 0.022 at VGS = 10 V 8 COMPLIANT 30 7 100 % UIS Tested 0.027 at VGS = 4.5 V 7.9 APPLICATIONS DC/DC Notebook System Power SO-8 D1 D2 S1 1 8 D1 G1... See More ⇒

 6.1. Size:89K  vishay
si4804cd.pdf pdf_icon

SI4804CDY

New Product Si4804CDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 100 % Rg Tested RoHS 0.022 at VGS = 10 V 8 COMPLIANT 30 7 100 % UIS Tested 0.027 at VGS = 4.5 V 7.9 APPLICATIONS DC/DC Notebook System Power SO-8 D1 D2 S1 1 8 D1 G1... See More ⇒

 8.1. Size:69K  vishay
si4804dy.pdf pdf_icon

SI4804CDY

Si4804DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 100% Rg Tested 0.022 @ VGS = 10 V 7.5 30 30 Pb-free 0.030 @ VGS = 4.5 V 6.5 Available SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2 5 Top View S1 S2 Ordering Information Si4804DY Si4804DY-T1 (with Tape and Reel) N-Channel... See More ⇒

 8.2. Size:245K  vishay
si4804bd.pdf pdf_icon

SI4804CDY

Si4804BDY Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.022 at VGS = 10 V 7.5 TrenchFET Power MOSFET 30 0.030 at VGS = 4.5 V 6.5 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Symmetrical Buck-Boost... See More ⇒

Detailed specifications: SI3493DDV, SI3993DV, SI4058DY, SI4062DY, SI4403DDY, SI4431BDY, SI4435FDY, SI4447DY, CS150N03A8, SI4848ADY, SI4850BDY, SI4925BDY, SI4936ADY, SI4946CDY, SI4966DY, SI5948DU, SI7113ADN

Keywords - SI4804CDY MOSFET specs

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