All MOSFET. SI4804CDY Datasheet

 

SI4804CDY MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI4804CDY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 7.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15.4 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 131 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SO-8

 SI4804CDY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4804CDY Datasheet (PDF)

 ..1. Size:89K  vishay
 si4804cdy.pdf

SI4804CDY SI4804CDY

New ProductSi4804CDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET 100 % Rg Tested RoHS0.022 at VGS = 10 V 8COMPLIANT30 7 100 % UIS Tested0.027 at VGS = 4.5 V 7.9APPLICATIONS DC/DC Notebook System PowerSO-8D1 D2S1 18 D1G1

 6.1. Size:89K  vishay
 si4804cd.pdf

SI4804CDY SI4804CDY

New ProductSi4804CDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET 100 % Rg Tested RoHS0.022 at VGS = 10 V 8COMPLIANT30 7 100 % UIS Tested0.027 at VGS = 4.5 V 7.9APPLICATIONS DC/DC Notebook System PowerSO-8D1 D2S1 18 D1G1

 8.1. Size:69K  vishay
 si4804dy.pdf

SI4804CDY SI4804CDY

Si4804DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARY FEATURESD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.022 @ VGS = 10 V 7.53030 Pb-free0.030 @ VGS = 4.5 V 6.5AvailableSO-8D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D25Top ViewS1 S2Ordering Information: Si4804DYSi4804DY-T1 (with Tape and Reel)N-Channel

 8.2. Size:245K  vishay
 si4804bd.pdf

SI4804CDY SI4804CDY

Si4804BDYVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.022 at VGS = 10 V 7.5 TrenchFET Power MOSFET300.030 at VGS = 4.5 V 6.5 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Symmetrical Buck-Boost

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXFH26N60Q

 

 
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