SI7972DP PDF and Equivalents Search

 

SI7972DP Specs and Replacement

Type Designator: SI7972DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 435 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SO-8

SI7972DP substitution

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SI7972DP datasheet

 ..1. Size:227K  vishay
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SI7972DP

Si7972DP www.vishay.com Vishay Siliconix Dual N-Channel 60 V (D-S) MOSFET FEATURES PowerPAK SO-8 Dual D1 TrenchFET power MOSFET D1 8 PWM optimized D2 7 D2 6 100 % Rg and UIS tested 5 Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 2 S1 APPLICATIONS 3 G1 1 4 S2 4 System power DC/DC G2 Top View Botto... See More ⇒

 9.1. Size:79K  vishay
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SI7972DP

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 9.2. Size:122K  vishay
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SI7972DP

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Detailed specifications: SI4946CDY, SI4966DY, SI5948DU, SI7113ADN, SI7153DN, SI7218DN, SI7615CDN, SI7900AEDN, 5N60, SI8823EDB, SI8824EDB, SI8902AEDB, SIA445EDJT, SIA465EDJ, SIA468DJ, SIA469DJ, SIA472EDJ

Keywords - SI7972DP MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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