SI7972DP Datasheet and Replacement
Type Designator: SI7972DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 435 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SO-8
SI7972DP substitution
SI7972DP Datasheet (PDF)
si7972dp.pdf
Si7972DPwww.vishay.comVishay SiliconixDual N-Channel 60 V (D-S) MOSFETFEATURESPowerPAK SO-8 DualD1 TrenchFET power MOSFETD1 8 PWM optimizedD2 7D2 6 100 % Rg and UIS tested5 Material categorization:for definitions of compliance please see www.vishay.com/doc?9991212 S1APPLICATIONS3 G11 4 S24 System power DC/DCG2Top View Botto
Datasheet: SI4946CDY , SI4966DY , SI5948DU , SI7113ADN , SI7153DN , SI7218DN , SI7615CDN , SI7900AEDN , 13N50 , SI8823EDB , SI8824EDB , SI8902AEDB , SIA445EDJT , SIA465EDJ , SIA468DJ , SIA469DJ , SIA472EDJ .
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