SI7972DP Datasheet and Replacement
Type Designator: SI7972DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15.2 nC
trⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 435 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SO-8
SI7972DP Datasheet (PDF)
si7972dp.pdf

Si7972DPwww.vishay.comVishay SiliconixDual N-Channel 60 V (D-S) MOSFETFEATURESPowerPAK SO-8 DualD1 TrenchFET power MOSFETD1 8 PWM optimizedD2 7D2 6 100 % Rg and UIS tested5 Material categorization:for definitions of compliance please see www.vishay.com/doc?9991212 S1APPLICATIONS3 G11 4 S24 System power DC/DCG2Top View Botto
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: 2SK1289 | SSF3036C | IRF640A | NTMFS4833NT1G | SQD100N04-3M6L | TPG65R360M | SI2321DS
Keywords - SI7972DP MOSFET datasheet
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History: 2SK1289 | SSF3036C | IRF640A | NTMFS4833NT1G | SQD100N04-3M6L | TPG65R360M | SI2321DS



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