SI8824EDB MOSFET Datasheet: N-Ch, 20V, 2.1A. Full specification with pinout and replacement list

SI8824EDB Specs and Replacement

Type Designator: SI8824EDB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V

|Id| ⓘ - Maximum Drain Current: 2.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: MICRO-FOOT0.8X0.8

SI8824EDB substitution

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SI8824EDB datasheet

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Si8824EDB www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) a Qg (TYP.) Ultra small 0.8 mm x 0.8 mm outline 0.075 at VGS = 4.5 V 2.9 Ultra thin 0.357 mm height 0.082 at VGS = 2.5 V 2.7 Typical ESD protection 2000 V (HBM) 20 0.090 at VGS = 1.8 V 2.6 2.7 nC Material categ... See More ⇒

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Si8823EDB www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES MICRO FOOT 0.8 x 0.8 S TrenchFET Gen III p-channel power MOSFET 2 2 S S Compact 0.8 mm x 0.8 mm outline area 3 3 Low 0.4 mm max. profile RDS(on) rating at VGS = -1.5 V Typical ESD protection 1900 V HBM 1 1 G G Material categorization for definitions of compliance 4... See More ⇒

Detailed specifications: SI5948DU, SI7113ADN, SI7153DN, SI7218DN, SI7615CDN, SI7900AEDN, SI7972DP, SI8823EDB, SI2302, SI8902AEDB, SIA445EDJT, SIA465EDJ, SIA468DJ, SIA469DJ, SIA472EDJ, SIA918EDJ, SIA923AEDJ