All MOSFET. SI8824EDB Datasheet

 

SI8824EDB Datasheet and Replacement


   Type Designator: SI8824EDB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.8 V
   |Id| ⓘ - Maximum Drain Current: 2.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 2.7 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: MICRO-FOOT0.8X0.8
 

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SI8824EDB Datasheet (PDF)

 ..1. Size:155K  vishay
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SI8824EDB

Si8824EDBwww.vishay.comVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) Ultra small 0.8 mm x 0.8 mm outline0.075 at VGS = 4.5 V 2.9 Ultra thin 0.357 mm height0.082 at VGS = 2.5 V 2.7 Typical ESD protection 2000 V (HBM)20 0.090 at VGS = 1.8 V 2.6 2.7 nC Material categ

 9.1. Size:153K  vishay
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SI8824EDB

 9.2. Size:134K  vishay
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SI8824EDB

 9.3. Size:142K  vishay
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SI8824EDB

Si8823EDBwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESMICRO FOOT 0.8 x 0.8S TrenchFET Gen III p-channel power MOSFET22SS Compact 0.8 mm x 0.8 mm outline area33 Low 0.4 mm max. profile RDS(on) rating at VGS = -1.5 V Typical ESD protection: 1900 V HBM11GG Material categorization: for definitions of compliance 4

Datasheet: SI5948DU , SI7113ADN , SI7153DN , SI7218DN , SI7615CDN , SI7900AEDN , SI7972DP , SI8823EDB , IRFZ46N , SI8902AEDB , SIA445EDJT , SIA465EDJ , SIA468DJ , SIA469DJ , SIA472EDJ , SIA918EDJ , SIA923AEDJ .

History: WML099N10HGS | STP17NK40ZFP

Keywords - SI8824EDB MOSFET datasheet

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