SI8902AEDB MOSFET. Datasheet pdf. Equivalent

   Type Designator: SI8902AEDB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id|ⓘ - Maximum Drain Current: 5.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3500 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: MICRO-FOOT2.4X1.6

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