SI8902AEDB PDF and Equivalents Search

 

SI8902AEDB Specs and Replacement

Type Designator: SI8902AEDB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3500 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: MICRO-FOOT2.4X1.6

SI8902AEDB substitution

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SI8902AEDB datasheet

 ..1. Size:245K  vishay
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SI8902AEDB

Si8902AEDB www.vishay.com Vishay Siliconix N-Channel 24 V (D-S) MOSFET, Common Drain FEATURES MICRO FOOT 2.4 x 1.6 S1 TrenchFET power MOSFET 2 G1 3 Small 2.4 mm x 1.6 mm outline S2 4 Thin 0.6 mm max. height Typical ESD protection 5000 V (HBM) 1 S1 6 Material categorization for definitions of G2 5 compliance please see www.vishay.com/doc?99912 1 S2 ... See More ⇒

 8.1. Size:200K  vishay
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SI8902AEDB

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 9.2. Size:181K  vishay
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Detailed specifications: SI7113ADN, SI7153DN, SI7218DN, SI7615CDN, SI7900AEDN, SI7972DP, SI8823EDB, SI8824EDB, AO3407, SIA445EDJT, SIA465EDJ, SIA468DJ, SIA469DJ, SIA472EDJ, SIA918EDJ, SIA923AEDJ, SIHA21N60EF

Keywords - SI8902AEDB MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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