SI8902AEDB Datasheet and Replacement
Type Designator: SI8902AEDB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3500 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: MICRO-FOOT2.4X1.6
SI8902AEDB substitution
SI8902AEDB Datasheet (PDF)
si8902aedb.pdf
Si8902AEDBwww.vishay.comVishay SiliconixN-Channel 24 V (D-S) MOSFET, Common DrainFEATURESMICRO FOOT 2.4 x 1.6S1 TrenchFET power MOSFET2G13 Small 2.4 mm x 1.6 mm outlineS24 Thin 0.6 mm max. height Typical ESD protection 5000 V (HBM)1S16 Material categorization: for definitions ofG25compliance please see www.vishay.com/doc?999121S2
Datasheet: SI7113ADN , SI7153DN , SI7218DN , SI7615CDN , SI7900AEDN , SI7972DP , SI8823EDB , SI8824EDB , 7N60 , SIA445EDJT , SIA465EDJ , SIA468DJ , SIA469DJ , SIA472EDJ , SIA918EDJ , SIA923AEDJ , SIHA21N60EF .
History: DMC3021LK4 | VN66AD | WMK060N10LGS | FQPF13N50T | AM7341P | TPC6103 | RU80T4H
Keywords - SI8902AEDB MOSFET datasheet
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History: DMC3021LK4 | VN66AD | WMK060N10LGS | FQPF13N50T | AM7341P | TPC6103 | RU80T4H
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