All MOSFET. SIA472EDJ Datasheet

 

SIA472EDJ Datasheet and Replacement


   Type Designator: SIA472EDJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 19.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 132 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOT-363 SC-70-6
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SIA472EDJ Datasheet (PDF)

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SIA472EDJ

SiA472EDJwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) a Qg (TYP.) Thermally enhanced PowerPAK0.0200 at VGS = 4.5 V 12SC-70 package30 11.6 nC0.0263 at VGS = 2.5 V 12- Small footprint area Typical ESD performance 2500 V HBMPowerPAK SC-70-6L SingleD

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History: IRFZ32 | 2N7002KB | 2SK2973 | 2SK2939 | SIB411DK | SI8810EDB | SI9434BDY

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