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SIA472EDJ Specs and Replacement

Type Designator: SIA472EDJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 19.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 132 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOT-363 SC-70-6

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SIA472EDJ datasheet

 ..1. Size:251K  vishay
 sia472edj.pdf pdf_icon

SIA472EDJ

SiA472EDJ www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) a Qg (TYP.) Thermally enhanced PowerPAK 0.0200 at VGS = 4.5 V 12 SC-70 package 30 11.6 nC 0.0263 at VGS = 2.5 V 12 - Small footprint area Typical ESD performance 2500 V HBM PowerPAK SC-70-6L Single D ... See More ⇒

Detailed specifications: SI7972DP, SI8823EDB, SI8824EDB, SI8902AEDB, SIA445EDJT, SIA465EDJ, SIA468DJ, SIA469DJ, STF13NM60N, SIA918EDJ, SIA923AEDJ, SIHA21N60EF, SIHA22N60AE, SIHA22N60AEL, SIHD4N80E, SIHG17N80E, SIHG70N60EF

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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