SIA918EDJ Specs and Replacement
Type Designator: SIA918EDJ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 7.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: SOT-363
SC-70-6
- MOSFET ⓘ Cross-Reference Search
SIA918EDJ datasheet
..1. Size:378K vishay
sia918edj.pdf 
SiA918EDJ www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Thermally enhanced PowerPAK SC-70 package 0.058 at VGS = 4.5 V 4.5 a - Small footprint area 30 0.065 at VGS = 2.5 V 4.5 a 3.6 nC - Low on-resistance Typical ESD protection 1000 V (HBM) 0.077 at ... See More ⇒
9.1. Size:280K vishay
sia914adj.pdf
SiA914ADJ www.vishay.com Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Thermally Enhanced PowerPAK 0.043 at VGS = 4.5 V 4.5 SC-70 Package 0.045 at VGS = 3.7 V 4.5 - Small Footprint Area 20 3.5 nC 0.050 at VGS = 2.5 V 4.5 - Low On-Resistance 0.063 at VGS = 1.8 V 4... See More ⇒
9.2. Size:225K vishay
sia914dj.pdf
New Product SiA914DJ Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.053 at VGS = 4.5 V 4.5 New Thermally Enhanced PowerPAK RoHS COMPLIANT SC-70 Package 0.063 at VGS = 2.5 V 20 4.5 4.1 nC - Small Footprint Area 0.077 at VGS = 1.8 V 4.5 - Low On-Resi... See More ⇒
9.3. Size:192K vishay
sia913adj.pdf
New Product SiA913ADJ Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.061 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK 0.081 at VGS = - 2.5 V - 12 - 4.5a 8.2 nC SC-70 Package 0.115 at VGS = - 1.8 V - Small Footprint ... See More ⇒
9.4. Size:195K vishay
sia915dj.pdf
New Product SiA915DJ Vishay Siliconix Dual P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.087 at VGS = - 10 V - 4.5a TrenchFET Power MOSFET - 30 3.2 nC 0.145 at VGS = - 4.5 V New Thermally Enhanced PowerPAK - 4.5a SC-70 Package - Small Footprint Area - Low On-Re... See More ⇒
9.5. Size:189K vishay
sia911adj.pdf
New Product SiA911ADJ Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.116 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK RoHS 0.155 at VGS = - 2.5 V - 20 - 4.5a 4.9 nC COMPLIANT SC-70 Package 0.205 at VGS = - 1.8 V - Small Footprint Area - 4.5... See More ⇒
9.6. Size:96K vishay
sia913dj.pdf
New Product SiA913DJ Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.070 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK RoHS 0.100 at VGS = - 2.5 V - 12 - 4.5a 5 nC COMPLIANT SC-70 Package 0.140 at VGS = - 1.8 V - Small Footprint Area - 4.5a ... See More ⇒
9.7. Size:188K vishay
sia911ad.pdf
New Product SiA911ADJ Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.116 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK RoHS 0.155 at VGS = - 2.5 V - 20 - 4.5a 4.9 nC COMPLIANT SC-70 Package 0.205 at VGS = - 1.8 V - Small Footprint Area - 4.5... See More ⇒
9.9. Size:192K vishay
sia911dj.pdf
SiA911DJ Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.094 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK RoHS 0.131 at VGS = - 2.5 V - 20 - 4.5a 4.9 nC COMPLIANT SC-70 Package 0.185 at VGS = - 1.8 V - Small Footprint Area - 4.5a - Low On-Re... See More ⇒
9.10. Size:190K vishay
sia913ad.pdf
New Product SiA913ADJ Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.061 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK 0.081 at VGS = - 2.5 V - 12 - 4.5a 8.2 nC SC-70 Package 0.115 at VGS = - 1.8 V - Small Footprint ... See More ⇒
9.11. Size:271K vishay
sia910edj.pdf
SiA910EDJ Vishay Siliconix Dual N-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Thermally Enhanced PowerPAK ID (A)a Qg (Typ.) SC-70 Package 0.028 at VGS = 4.5 V 4.5 - Small Footprint Area 12 0.033 at VGS = 2.5 V 6.2 nC 4.5 - Low On-Resistance Typical ESD Protection 2400 V 0.042 at Vgs = 1.8 V 4.5 100 % R... See More ⇒
9.12. Size:192K vishay
sia912dj.pdf
New Product SiA912DJ Vishay Siliconix Dual N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.040 at VGS = 4.5 V 4.5 New Thermally Enhaced PowerPAK RoHS COMPLIANT SC-70 Package 0.048 at VGS = 2.5 V 12 4.5 4.5 nC - Small Footprint Area 0.063 at VGS = 1.8 V 4.5 APPLICATIONS ... See More ⇒
9.13. Size:200K vishay
sia911ed.pdf
SiA911EDJ Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.101 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK 0.141 at VGS = - 2.5 V - 20 - 4.5a 4.9 nC SC-70 Package 0.192 at VGS = - 1.8 V - 2 - Small Footpr... See More ⇒
Detailed specifications: SI8823EDB, SI8824EDB, SI8902AEDB, SIA445EDJT, SIA465EDJ, SIA468DJ, SIA469DJ, SIA472EDJ, IRFZ24N, SIA923AEDJ, SIHA21N60EF, SIHA22N60AE, SIHA22N60AEL, SIHD4N80E, SIHG17N80E, SIHG70N60EF, SIHH180N60E
Keywords - SIA918EDJ MOSFET specs
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