SIA918EDJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIA918EDJ
Маркировка: CL
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 7.8 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 8 V
Пороговое напряжение включения |Ugs(th)|: 0.9 V
Максимально допустимый постоянный ток стока |Id|: 4.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 6.2 nC
Время нарастания (tr): 30 ns
Сопротивление сток-исток открытого транзистора (Rds): 0.058 Ohm
Тип корпуса: SOT-363 SC-70-6
SIA918EDJ Datasheet (PDF)
sia918edj.pdf
SiA918EDJwww.vishay.comVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Thermally enhanced PowerPAK SC-70 package0.058 at VGS = 4.5 V 4.5 a- Small footprint area30 0.065 at VGS = 2.5 V 4.5 a 3.6 nC - Low on-resistance Typical ESD protection: 1000 V (HBM)0.077 at
sia914adj.pdf
SiA914ADJwww.vishay.comVishay SiliconixDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) Thermally Enhanced PowerPAK0.043 at VGS = 4.5 V 4.5SC-70 Package0.045 at VGS = 3.7 V 4.5- Small Footprint Area20 3.5 nC0.050 at VGS = 2.5 V 4.5- Low On-Resistance0.063 at VGS = 1.8 V 4
sia914dj.pdf
New ProductSiA914DJVishay SiliconixDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.053 at VGS = 4.5 V 4.5 New Thermally Enhanced PowerPAKRoHSCOMPLIANTSC-70 Package0.063 at VGS = 2.5 V 20 4.5 4.1 nC- Small Footprint Area0.077 at VGS = 1.8 V 4.5- Low On-Resi
sia913adj.pdf
New ProductSiA913ADJVishay SiliconixDual P-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.061 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK0.081 at VGS = - 2.5 V - 12- 4.5a 8.2 nCSC-70 Package0.115 at VGS = - 1.8 V - Small Footprint
sia915dj.pdf
New ProductSiA915DJVishay SiliconixDual P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.087 at VGS = - 10 V - 4.5a TrenchFET Power MOSFET- 30 3.2 nC0.145 at VGS = - 4.5 V New Thermally Enhanced PowerPAK- 4.5aSC-70 Package- Small Footprint Area- Low On-Re
sia911adj.pdf
New ProductSiA911ADJVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.116 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAKRoHS0.155 at VGS = - 2.5 V - 20- 4.5a 4.9 nCCOMPLIANTSC-70 Package0.205 at VGS = - 1.8 V - Small Footprint Area- 4.5
sia913dj.pdf
New ProductSiA913DJVishay SiliconixDual P-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.070 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAKRoHS0.100 at VGS = - 2.5 V - 12- 4.5a 5 nCCOMPLIANTSC-70 Package0.140 at VGS = - 1.8 V - Small Footprint Area- 4.5a
sia911ad.pdf
New ProductSiA911ADJVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.116 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAKRoHS0.155 at VGS = - 2.5 V - 20- 4.5a 4.9 nCCOMPLIANTSC-70 Package0.205 at VGS = - 1.8 V - Small Footprint Area- 4.5
sia917dj.pdf
New ProductSiA917DJVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.110 at VGS = - 4.5 V - 4.5a- 20 3 nC New Thermally Enhanced PowerPAK RoHS0.185 at VGS = - 2.5 V - 4.5a COMPLIANTSC-70 Package- Small Footprint Area- Low On-ResistanceAPPLICATIONS
sia911dj.pdf
SiA911DJVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.094 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAKRoHS0.131 at VGS = - 2.5 V - 20- 4.5a 4.9 nCCOMPLIANTSC-70 Package0.185 at VGS = - 1.8 V - Small Footprint Area- 4.5a- Low On-Re
sia913ad.pdf
New ProductSiA913ADJVishay SiliconixDual P-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.061 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK0.081 at VGS = - 2.5 V - 12- 4.5a 8.2 nCSC-70 Package0.115 at VGS = - 1.8 V - Small Footprint
sia910edj.pdf
SiA910EDJVishay SiliconixDual N-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Thermally Enhanced PowerPAKID (A)a Qg (Typ.)SC-70 Package0.028 at VGS = 4.5 V 4.5- Small Footprint Area12 0.033 at VGS = 2.5 V 6.2 nC4.5 - Low On-Resistance Typical ESD Protection: 2400 V0.042 at Vgs = 1.8 V 4.5 100 % R
sia912dj.pdf
New ProductSiA912DJVishay SiliconixDual N-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.040 at VGS = 4.5 V 4.5 New Thermally Enhaced PowerPAKRoHSCOMPLIANTSC-70 Package0.048 at VGS = 2.5 V 12 4.5 4.5 nC- Small Footprint Area0.063 at VGS = 1.8 V 4.5APPLICATIONS
sia911ed.pdf
SiA911EDJVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.101 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK0.141 at VGS = - 2.5 V - 20- 4.5a 4.9 nCSC-70 Package0.192 at VGS = - 1.8 V - 2 - Small Footpr
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