SIHD4N80E MOSFET Datasheet: N-Ch, 800V, 4.3A. Full specification with pinout and replacement list

SIHD4N80E Specs and Replacement

Type Designator: SIHD4N80E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 34 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.27 Ohm

Package: TO-252

SIHD4N80E substitution

- MOSFET ⓘ Cross-Reference Search

SIHD4N80E datasheet

..1. Size:128K vishay
sihd4n80e.pdf pdf_icon

SiHD4N80E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Low figure-of-merit (FOM) Ron x Qg DPAK (TO-252) Low input capacitance (Ciss) Reduced switching and conduction losses D G Ultra low gate charge (Qg) Avalanche energy rated (UIS) S Material categorization for definitions of compliance G please see www.vishay.com/doc?99912 S N-Cha... See More ⇒

..2. Size:292K inchange semiconductor
sihd4n80e.pdf pdf_icon

isc N-Channel MOSFET Transistor SiHD4N80E FEATURES Drain Current I = 4.3A@ T =25 D C Drain Source Voltage- V = 800V(Min) DSS Static Drain-Source On-Resistance R 1.27 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIM... See More ⇒

Detailed specifications: SIA468DJ, SIA469DJ, SIA472EDJ, SIA918EDJ, SIA923AEDJ, SIHA21N60EF, SIHA22N60AE, SIHA22N60AEL, AO3400A, SIHG17N80E, SIHG70N60EF, SIHH180N60E, SIHH27N60EF, SIHP11N80E, SIHP120N60E, SIHP17N80E, SIHP25N60EFL