All MOSFET. SIHD4N80E Datasheet

 

SIHD4N80E Datasheet and Replacement


   Type Designator: SIHD4N80E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 16 nC
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.27 Ohm
   Package: TO-252
 

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SIHD4N80E Datasheet (PDF)

 ..1. Size:128K  vishay
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SIHD4N80E

SiHD4N80Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESD Low figure-of-merit (FOM) Ron x QgDPAK (TO-252) Low input capacitance (Ciss) Reduced switching and conduction lossesDG Ultra low gate charge (Qg) Avalanche energy rated (UIS)S Material categorization: for definitions of complianceGplease see www.vishay.com/doc?99912SN-Cha

 ..2. Size:292K  inchange semiconductor
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SIHD4N80E

isc N-Channel MOSFET Transistor SiHD4N80EFEATURESDrain Current I = 4.3A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R : 1.27(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIM

Datasheet: SIA468DJ , SIA469DJ , SIA472EDJ , SIA918EDJ , SIA923AEDJ , SIHA21N60EF , SIHA22N60AE , SIHA22N60AEL , RU6888R , SIHG17N80E , SIHG70N60EF , SIHH180N60E , SIHH27N60EF , SIHP11N80E , SIHP120N60E , SIHP17N80E , SIHP25N60EFL .

History: IRL3803VSPBF | HSM4313 | SIRA18ADP | NCE30H29D

Keywords - SIHD4N80E MOSFET datasheet

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