All MOSFET. SIHG70N60EF Datasheet

 

SIHG70N60EF Datasheet and Replacement


   Type Designator: SIHG70N60EF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 107 nS
   Cossⓘ - Output Capacitance: 378 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TO-247AC
 

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SIHG70N60EF Datasheet (PDF)

 ..1. Size:187K  vishay
 sihg70n60ef.pdf pdf_icon

SIHG70N60EF

SiHG70N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESPRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRMRDS(on) typ. at 25 C () VGS = 10 V 0.033 Low figure-of-merit (FOM): Ron x QgQg (Max.) (nC) 380 Low input capacitance (Ciss)Qgs (nC) 62 Increase

 9.1. Size:184K  vishay
 sihg73n60e.pdf pdf_icon

SIHG70N60EF

SiHG73N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.039 Reduced switching and conduction lossesQg max. (nC) 362 Ultra low gate charge (Qg)Qgs (nC) 48Available Avalanche energy rated (UIS)Qgd

Datasheet: SIA472EDJ , SIA918EDJ , SIA923AEDJ , SIHA21N60EF , SIHA22N60AE , SIHA22N60AEL , SIHD4N80E , SIHG17N80E , IRFZ48N , SIHH180N60E , SIHH27N60EF , SIHP11N80E , SIHP120N60E , SIHP17N80E , SIHP25N60EFL , SIR164ADP , SIR182DP .

History: JFPC5N80C | NCE30H12K

Keywords - SIHG70N60EF MOSFET datasheet

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