SIHG70N60EF PDF and Equivalents Search

 

SIHG70N60EF Specs and Replacement

Type Designator: SIHG70N60EF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 520 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 107 nS

Cossⓘ - Output Capacitance: 378 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: TO-247AC

SIHG70N60EF substitution

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SIHG70N60EF datasheet

 ..1. Size:187K  vishay
 sihg70n60ef.pdf pdf_icon

SIHG70N60EF

SiHG70N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRM RDS(on) typ. at 25 C ( ) VGS = 10 V 0.033 Low figure-of-merit (FOM) Ron x Qg Qg (Max.) (nC) 380 Low input capacitance (Ciss) Qgs (nC) 62 Increase... See More ⇒

 9.1. Size:184K  vishay
 sihg73n60e.pdf pdf_icon

SIHG70N60EF

SiHG73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.039 Reduced switching and conduction losses Qg max. (nC) 362 Ultra low gate charge (Qg) Qgs (nC) 48 Available Avalanche energy rated (UIS) Qgd ... See More ⇒

Detailed specifications: SIA472EDJ, SIA918EDJ, SIA923AEDJ, SIHA21N60EF, SIHA22N60AE, SIHA22N60AEL, SIHD4N80E, SIHG17N80E, STP65NF06, SIHH180N60E, SIHH27N60EF, SIHP11N80E, SIHP120N60E, SIHP17N80E, SIHP25N60EFL, SIR164ADP, SIR182DP

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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