SIHH27N60EF Specs and Replacement
Type Designator: SIHH27N60EF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 202 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 29 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 63 nS
Cossⓘ - Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: POWERPAK-8X8
SIHH27N60EF substitution
- MOSFET ⓘ Cross-Reference Search
SIHH27N60EF datasheet
sihh27n60ef.pdf
SiHH27N60EF www.vishay.com Vishay Siliconix E Series Power MOSFET With Fast Body Diode FEATURES Pin 4 Completely lead (Pb)-free device PowerPAK 8 x 8 Low figure-of-merit (FOM) Ron x Qg Pin 1 Low input capacitance (Ciss) 4 Reduced switching and conduction losses Pin 2 1 Ultra low gate charge (Qg) 2 Avalanche energy rated (UIS) 3 3 Pin 3 Kelvin co... See More ⇒
sihh21n60e.pdf
SiHH21N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Fully lead (Pb)-free device VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg RDS(on) typ. ( ) at 25 C VGS = 10 V 0.153 Low input capacitance (Ciss) Qg max. (nC) 83 Reduced switching and conduction losses Qgs (nC) 11 Qgd (nC) 20 Ultra low gate charge (Qg) Conf... See More ⇒
sihh26n60e.pdf
SiHH26N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Fully lead (Pb)-free device VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg RDS(on) typ. ( ) at 25 C VGS = 10 V 0.117 Low input capacitance (Ciss) Qg max. (nC) 116 Reduced switching and conduction losses Qgs (nC) 18 Qgd (nC) 33 Ultra low gate charge (Qg) Con... See More ⇒
Detailed specifications: SIA923AEDJ, SIHA21N60EF, SIHA22N60AE, SIHA22N60AEL, SIHD4N80E, SIHG17N80E, SIHG70N60EF, SIHH180N60E, 7N60, SIHP11N80E, SIHP120N60E, SIHP17N80E, SIHP25N60EFL, SIR164ADP, SIR182DP, SIR610DP, SIR624DP
Keywords - SIHH27N60EF MOSFET specs
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