SIHH27N60EF Datasheet and Replacement
Type Designator: SIHH27N60EF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 202 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 29 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 63 nS
Cossⓘ - Output Capacitance: 125 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: POWERPAK-8X8
SIHH27N60EF substitution
SIHH27N60EF Datasheet (PDF)
sihh27n60ef.pdf

SiHH27N60EFwww.vishay.comVishay SiliconixE Series Power MOSFET With Fast Body DiodeFEATURESPin 4 Completely lead (Pb)-free devicePowerPAK 8 x 8 Low figure-of-merit (FOM) Ron x QgPin 1 Low input capacitance (Ciss)4 Reduced switching and conduction lossesPin 21 Ultra low gate charge (Qg)2 Avalanche energy rated (UIS)33 Pin 3 Kelvin co
sihh21n60e.pdf

SiHH21N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Fully lead (Pb)-free deviceVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x QgRDS(on) typ. () at 25 C VGS = 10 V 0.153 Low input capacitance (Ciss)Qg max. (nC) 83 Reduced switching and conduction lossesQgs (nC) 11Qgd (nC) 20 Ultra low gate charge (Qg)Conf
sihh26n60e.pdf

SiHH26N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Fully lead (Pb)-free deviceVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x QgRDS(on) typ. () at 25 C VGS = 10 V 0.117 Low input capacitance (Ciss)Qg max. (nC) 116 Reduced switching and conduction lossesQgs (nC) 18Qgd (nC) 33 Ultra low gate charge (Qg)Con
Datasheet: SIA923AEDJ , SIHA21N60EF , SIHA22N60AE , SIHA22N60AEL , SIHD4N80E , SIHG17N80E , SIHG70N60EF , SIHH180N60E , MMIS60R580P , SIHP11N80E , SIHP120N60E , SIHP17N80E , SIHP25N60EFL , SIR164ADP , SIR182DP , SIR610DP , SIR624DP .
History: SSPL5505
Keywords - SIHH27N60EF MOSFET datasheet
SIHH27N60EF cross reference
SIHH27N60EF equivalent finder
SIHH27N60EF lookup
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SIHH27N60EF replacement
History: SSPL5505



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