All MOSFET. SIR164ADP Datasheet

 

SIR164ADP Datasheet and Replacement


   Type Designator: SIR164ADP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id| ⓘ - Maximum Drain Current: 35.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 51 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1040 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: SO-8
 

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SIR164ADP Datasheet (PDF)

 ..1. Size:207K  vishay
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SIR164ADP

SiR164ADPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8 100 % Rg and UIS testedD 7D 6 Material categorization:5for definitions of compliance please seewww.vishay.com/doc?999121APPLICATIONSD2 S Synchronous rectification3 S4 S1 High power density DC/DCGTop

 8.1. Size:306K  vishay
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SIR164ADP

New ProductSiR164DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.)Definition0.0025 at VGS = 10 V 50 TrenchFET Gen III Power MOSFET30 40.6 nC New MOSFET Technology Optimized for 0.0032 at VGS = 4.5 V 50Ringing Reduction in Switching Application Powe

 9.1. Size:108K  vishay
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SIR164ADP

New ProductSiR166DPVishay SiliconixN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARY FEATURESVDS (V) RDS(on) ()ID (A)a Qg (Typ.) Halogen-free According to IEC 61249-2-21Definition0.0032 at VGS = 10 V 40g30 25 nC TrenchFET Power MOSFET0.0040 at VGS = 4.5 V 40g 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK

 9.2. Size:487K  vishay
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SIR164ADP

SiR168DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0044 at VGS = 10 V TrenchFET Power MOSFET4030 24.5 nC 100 % Rg Tested0.0059 at VGS = 4.5 V 40 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8APPLICATIONS

Datasheet: SIHG17N80E , SIHG70N60EF , SIHH180N60E , SIHH27N60EF , SIHP11N80E , SIHP120N60E , SIHP17N80E , SIHP25N60EFL , AON7403 , SIR182DP , SIR610DP , SIR624DP , SIR626DP , SIR638DP , SIR680DP , SIR688DP , SIR690DP .

History: NTMTS0D7N06CL | WMQ30P04T1 | SI5486DU

Keywords - SIR164ADP MOSFET datasheet

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