All MOSFET. SIR182DP Datasheet

 

SIR182DP Datasheet and Replacement


   Type Designator: SIR182DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 31.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 840 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: SO-8
 

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SIR182DP Datasheet (PDF)

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SIR182DP

SiR182DPwww.vishay.comVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8D 7 Very low RDS - Qg figure-of-merit (FOM)D 65 Tuned for the lowest RDS - Qoss FOM 100 % Rg and UIS tested Material categorization: for definitions of 1compliance please see www.vishay.com/doc?999122 S3 S4 S1

Datasheet: SIHG70N60EF , SIHH180N60E , SIHH27N60EF , SIHP11N80E , SIHP120N60E , SIHP17N80E , SIHP25N60EFL , SIR164ADP , 8N60 , SIR610DP , SIR624DP , SIR626DP , SIR638DP , SIR680DP , SIR688DP , SIR690DP , SIR871DP .

History: IPP037N08N3 | NCEP045N10F

Keywords - SIR182DP MOSFET datasheet

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