SIR182DP PDF and Equivalents Search

 

SIR182DP Specs and Replacement

Type Designator: SIR182DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 31.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 840 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: SO-8

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SIR182DP datasheet

 ..1. Size:349K  vishay
 sir182dp.pdf pdf_icon

SIR182DP

SiR182DP www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET Gen IV power MOSFET D 8 D 7 Very low RDS - Qg figure-of-merit (FOM) D 6 5 Tuned for the lowest RDS - Qoss FOM 100 % Rg and UIS tested Material categorization for definitions of 1 compliance please see www.vishay.com/doc?99912 2 S 3 S 4 S 1 ... See More ⇒

Detailed specifications: SIHG70N60EF, SIHH180N60E, SIHH27N60EF, SIHP11N80E, SIHP120N60E, SIHP17N80E, SIHP25N60EFL, SIR164ADP, IRFB7545, SIR610DP, SIR624DP, SIR626DP, SIR638DP, SIR680DP, SIR688DP, SIR690DP, SIR871DP

Keywords - SIR182DP MOSFET specs

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