All MOSFET. SIR624DP Datasheet

 

SIR624DP Datasheet and Replacement


   Type Designator: SIR624DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SO-8
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SIR624DP Datasheet (PDF)

 ..1. Size:412K  vishay
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SIR624DP

SiR624DPwww.vishay.comVishay SiliconixN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET technology optimizes balance VDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.)of RDS(on), Qg, Qsw, and Qoss0.060 at VGS = 10 V 18.6200 15 nC 100 % Rg and UIS tested0.064 at VGS = 7.5 V 18 Material categorization:PowerPAK SO-8 Singlefor definitions of com

 9.1. Size:404K  vishay
 sir626dp.pdf pdf_icon

SIR624DP

SiR626DPwww.vishay.comVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8D 7 Very low RDS - Qg figure-of-merit (FOM)D 65 Tuned for the lowest RDS - Qoss FOM 100 % Rg and UIS tested Material categorization: for definitions of 1compliance please see www.vishay.com/doc?999122 S3 S4 S1

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History: PPMT30V4 | HLML6401 | OSG65R200FT3F | HU830U | RFL1N10L | STP5NB40 | AP85T03GH-HF

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