SIR624DP Datasheet. Specs and Replacement

Type Designator: SIR624DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SO-8

SIR624DP substitution

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SIR624DP datasheet

 ..1. Size:412K  vishay
 sir624dp.pdf pdf_icon

SIR624DP

SiR624DP www.vishay.com Vishay Siliconix N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET technology optimizes balance VDS (V) RDS(on) ( ) MAX. ID (A) a Qg (TYP.) of RDS(on), Qg, Qsw, and Qoss 0.060 at VGS = 10 V 18.6 200 15 nC 100 % Rg and UIS tested 0.064 at VGS = 7.5 V 18 Material categorization PowerPAK SO-8 Single for definitions of com... See More ⇒

 9.1. Size:404K  vishay
 sir626dp.pdf pdf_icon

SIR624DP

SiR626DP www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET Gen IV power MOSFET D 8 D 7 Very low RDS - Qg figure-of-merit (FOM) D 6 5 Tuned for the lowest RDS - Qoss FOM 100 % Rg and UIS tested Material categorization for definitions of 1 compliance please see www.vishay.com/doc?99912 2 S 3 S 4 S 1... See More ⇒

Detailed specifications: SIHH27N60EF, SIHP11N80E, SIHP120N60E, SIHP17N80E, SIHP25N60EFL, SIR164ADP, SIR182DP, SIR610DP, K2611, SIR626DP, SIR638DP, SIR680DP, SIR688DP, SIR690DP, SIR871DP, SIR873DP, SIRA01DP

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