All MOSFET. SIR688DP Datasheet

 

SIR688DP Datasheet and Replacement


   Type Designator: SIR688DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 5.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 29.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 1345 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: SO-8
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SIR688DP Datasheet (PDF)

 ..1. Size:323K  vishay
 sir688dp.pdf pdf_icon

SIR688DP

SiR688DPVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0035 at VGS = 10 V 60 Low Qg for High Efficiency60 0.0045 at VGS = 6 V 60 20.5 nC Material categorization:For definitions of compliance please see0.0060 at VGS = 4.5 V 60www.vishay.co

 9.1. Size:402K  vishay
 sir680dp.pdf pdf_icon

SIR688DP

SiR680DPwww.vishay.comVishay SiliconixN-Channel 80 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8D 7 Very low RDS - Qg figure-of-merit (FOM)D 65 Tuned for the lowest RDS - Qoss FOM 100 % Rg and UIS tested Material categorization: for definitions of 1compliance please see www.vishay.com/doc?999122 S3 S4 S1

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History: CHM85A3PAGP | SFFX054Z | TK7P65W

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