All MOSFET. SIR690DP Datasheet

 

SIR690DP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIR690DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 6.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 31.9 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SO-8

 SIR690DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIR690DP Datasheet (PDF)

 ..1. Size:1115K  vishay
 sir690dp.pdf

SIR690DP SIR690DP

SiR690DPwww.vishay.comVishay SiliconixN-Channel 200 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD ThunderFET technology optimizes balanceD 8of RDS(on), Qg, Qsw and QossD 7D 6 100 % Rg and UIS tested5 Material categorization:for definitions of compliance please seewww.vishay.com/doc?9991212 S3 SAPPLICATIONSD4 S1G DC/DC convertersT

 9.1. Size:319K  vishay
 sir698dp.pdf

SIR690DP SIR690DP

SiR698DPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.)Definition0.195 at VGS = 10 V 7.5 TrenchFET Power MOSFET100 5.2 nC0.230 at VGS = 6 V 6.9 100 % Rg and UIS Tested Low Qg for High EfficiencyPowerPAK SO-8 Compliant to RoHS Directive 2002/9

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FDP036N10A | WMM16N70SR

 

 
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