SIR690DP Datasheet. Specs and Replacement
Type Designator: SIR690DP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 6.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 145 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SO-8
SIR690DP substitution
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SIR690DP datasheet
sir690dp.pdf
SiR690DP www.vishay.com Vishay Siliconix N-Channel 200 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D ThunderFET technology optimizes balance D 8 of RDS(on), Qg, Qsw and Qoss D 7 D 6 100 % Rg and UIS tested 5 Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 2 S 3 S APPLICATIONS D 4 S 1 G DC/DC converters T... See More ⇒
sir698dp.pdf
SiR698DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Definition 0.195 at VGS = 10 V 7.5 TrenchFET Power MOSFET 100 5.2 nC 0.230 at VGS = 6 V 6.9 100 % Rg and UIS Tested Low Qg for High Efficiency PowerPAK SO-8 Compliant to RoHS Directive 2002/9... See More ⇒
Detailed specifications: SIR164ADP, SIR182DP, SIR610DP, SIR624DP, SIR626DP, SIR638DP, SIR680DP, SIR688DP, AO4407A, SIR871DP, SIR873DP, SIRA01DP, SIRA10BDP, SIRA12BDP, SIRA14BDP, SIRA18ADP, SIRA24DP
Keywords - SIR690DP MOSFET specs
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History: NCEP1290AK
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