SIRA52DP Datasheet. Specs and Replacement

Type Designator: SIRA52DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 39.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 1325 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm

Package: SO-8

SIRA52DP substitution

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SIRA52DP datasheet

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SIRA52DP

SiRA52DP www.vishay.com Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV power MOSFET VDS (V) RDS(on) ( ) (MAX.) ID (A) a, g Qg (TYP.) Tuned for the lowest RDS-Qoss FOM 0.0017 at VGS = 10 V 60 40 47.5 nC 100 % Rg and UIS tested 0.0023 at VGS = 4.5 V 60 Qgd / Qgs ratio ... See More ⇒

Detailed specifications: SIRA01DP, SIRA10BDP, SIRA12BDP, SIRA14BDP, SIRA18ADP, SIRA24DP, SIRA26DP, SIRA32DP, IRF540, SIRA60DP, SIRA64DP, SIRA66DP, SIRA72DP, SIRA84DP, SIRA88DP, SIRA96DP, SIS472BDN

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