All MOSFET. SIRA52DP Datasheet

 

SIRA52DP Datasheet and Replacement


   Type Designator: SIRA52DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 4.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 39.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 1325 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: SO-8
 

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SIRA52DP Datasheet (PDF)

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SIRA52DP

SiRA52DPwww.vishay.comVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV power MOSFETVDS (V) RDS(on) () (MAX.) ID (A) a, g Qg (TYP.) Tuned for the lowest RDS-Qoss FOM 0.0017 at VGS = 10 V 6040 47.5 nC 100 % Rg and UIS tested0.0023 at VGS = 4.5 V 60 Qgd / Qgs ratio

Datasheet: SIRA01DP , SIRA10BDP , SIRA12BDP , SIRA14BDP , SIRA18ADP , SIRA24DP , SIRA26DP , SIRA32DP , IRF540N , SIRA60DP , SIRA64DP , SIRA66DP , SIRA72DP , SIRA84DP , SIRA88DP , SIRA96DP , SIS472BDN .

History: TK40A06N1 | APM9933K | SPB80N06S-08 | IRF9317 | APT56F50B2 | BL4N60A-P | DMT6004LPS

Keywords - SIRA52DP MOSFET datasheet

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