All MOSFET. SIRA52DP Datasheet

 

SIRA52DP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIRA52DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 4.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 39.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 97.5 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 1325 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: SO-8

 SIRA52DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIRA52DP Datasheet (PDF)

 ..1. Size:399K  vishay
 sira52dp.pdf

SIRA52DP SIRA52DP

SiRA52DPwww.vishay.comVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV power MOSFETVDS (V) RDS(on) () (MAX.) ID (A) a, g Qg (TYP.) Tuned for the lowest RDS-Qoss FOM 0.0017 at VGS = 10 V 6040 47.5 nC 100 % Rg and UIS tested0.0023 at VGS = 4.5 V 60 Qgd / Qgs ratio

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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