SIRA84DP Datasheet and Replacement
Type Designator: SIRA84DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 450 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
Package: SO-8
SIRA84DP substitution
SIRA84DP Datasheet (PDF)
sira84dp.pdf

SiRA84DPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8 Tuned for reducing transient spikesD 7D 6 100 % Rg and UIS tested5 Material categorization:for definitions of compliance please seewww.vishay.com/doc?9991212 S3 S APPLICATIONS D4 S1 Synchronous buck convert
sira88dp.pdf

SiRA88DPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8D 7 100 % Rg and UIS testedD 6 Material categorization: 5for definitions of compliance please see www.vishay.com/doc?999121APPLICATIONS2 SD3 S DC/DC conversion4 S1G Battery protectionTop View Bottom V
Datasheet: SIRA24DP , SIRA26DP , SIRA32DP , SIRA52DP , SIRA60DP , SIRA64DP , SIRA66DP , SIRA72DP , IRF1404 , SIRA88DP , SIRA96DP , SIS472BDN , SIS488DN , SISA01DN , SISA24DN , SISA66DN , SISA72DN .
Keywords - SIRA84DP MOSFET datasheet
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