All MOSFET. SIRA96DP Datasheet

 

SIRA96DP Datasheet and Replacement


   Type Designator: SIRA96DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 478 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
   Package: SO-8
 

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SIRA96DP Datasheet (PDF)

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SIRA96DP

SiRA96DPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8 Tuned for reducing transient spikesD 7D 6 100 % Rg and UIS tested5 Material categorization:for definitions of compliance please seewww.vishay.com/doc?9991212 S3 S APPLICATIONS D4 S1 Synchronous buck convert

Datasheet: SIRA32DP , SIRA52DP , SIRA60DP , SIRA64DP , SIRA66DP , SIRA72DP , SIRA84DP , SIRA88DP , IRF640N , SIS472BDN , SIS488DN , SISA01DN , SISA24DN , SISA66DN , SISA72DN , SISA88DN , SISA96DN .

History: NP180N04TUJ | SRT10N160LD

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