SIRA96DP Datasheet. Specs and Replacement

Type Designator: SIRA96DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 478 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm

Package: SO-8

SIRA96DP substitution

- MOSFET ⓘ Cross-Reference Search

 

SIRA96DP datasheet

 ..1. Size:253K  vishay
 sira96dp.pdf pdf_icon

SIRA96DP

SiRA96DP www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET Gen IV power MOSFET D 8 Tuned for reducing transient spikes D 7 D 6 100 % Rg and UIS tested 5 Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 2 S 3 S APPLICATIONS D 4 S 1 Synchronous buck convert... See More ⇒

Detailed specifications: SIRA32DP, SIRA52DP, SIRA60DP, SIRA64DP, SIRA66DP, SIRA72DP, SIRA84DP, SIRA88DP, IRFB4110, SIS472BDN, SIS488DN, SISA01DN, SISA24DN, SISA66DN, SISA72DN, SISA88DN, SISA96DN

Keywords - SIRA96DP MOSFET specs

 SIRA96DP cross reference

 SIRA96DP equivalent finder

 SIRA96DP pdf lookup

 SIRA96DP substitution

 SIRA96DP replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs