All MOSFET. SIRA96DP Datasheet

 

SIRA96DP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIRA96DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20.5 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 478 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
   Package: SO-8

 SIRA96DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIRA96DP Datasheet (PDF)

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 sira96dp.pdf

SIRA96DP SIRA96DP

SiRA96DPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8 Tuned for reducing transient spikesD 7D 6 100 % Rg and UIS tested5 Material categorization:for definitions of compliance please seewww.vishay.com/doc?9991212 S3 S APPLICATIONS D4 S1 Synchronous buck convert

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