SIRA96DP MOSFET. Datasheet pdf. Equivalent
Type Designator: SIRA96DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20.5 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 478 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
Package: SO-8
SIRA96DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIRA96DP Datasheet (PDF)
..1. Size:253K vishay
sira96dp.pdf
sira96dp.pdf
SiRA96DPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8 Tuned for reducing transient spikesD 7D 6 100 % Rg and UIS tested5 Material categorization:for definitions of compliance please seewww.vishay.com/doc?9991212 S3 S APPLICATIONS D4 S1 Synchronous buck convert
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