SIS488DN Datasheet. Specs and Replacement

Type Designator: SIS488DN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: POWERPAK-1212-8

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SIS488DN datasheet

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SIS488DN

SiS488DN Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)f Qg (Typ.) 100 % Rg and UIS Tested 0.0055 at VGS = 10 V 40g Capable of Operating with 5 V Gate Drive 40 9.8 nC 0.0075 at VGS = 4.5 V 40g Material categorization For definitions of compliance please see www.vishay.com/doc?99... See More ⇒

Detailed specifications: SIRA60DP, SIRA64DP, SIRA66DP, SIRA72DP, SIRA84DP, SIRA88DP, SIRA96DP, SIS472BDN, IRFP260N, SISA01DN, SISA24DN, SISA66DN, SISA72DN, SISA88DN, SISA96DN, SISB46DN, SISS27ADN

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