SISA01DN Datasheet. Specs and Replacement

Type Designator: SISA01DN

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 1420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm

Package: POWERPAK-1212-8

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SISA01DN datasheet

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SISA01DN

SiSA01DN www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PowerPAK 1212-8 Single D TrenchFET Gen IV p-channel power MOSFET D 8 D Provides exceptionally low RDS(ON) in a compact 7 D 6 package that is thermally enhanced 5 Enables higher power density 100 % Rg and UIS tested Material categorization for definitions of compliance 1 1 ... See More ⇒

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SISA01DN

New Product SiSA04DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) (Max.) ID (A)f Qg (Typ.) Definition 0.00215 at VGS = 10 V 40g TrenchFET Gen IV Power MOSFET 30 22.5 nC 0.0031 at VGS = 4.5 V 40g 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK 12... See More ⇒

Detailed specifications: SIRA64DP, SIRA66DP, SIRA72DP, SIRA84DP, SIRA88DP, SIRA96DP, SIS472BDN, SIS488DN, AO3400, SISA24DN, SISA66DN, SISA72DN, SISA88DN, SISA96DN, SISB46DN, SISS27ADN, SISS27DN

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.