All MOSFET. SISA88DN Datasheet

 

SISA88DN Datasheet and Replacement


   Type Designator: SISA88DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 305 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0067 Ohm
   Package: POWERPAK-1212-8
 

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SISA88DN Datasheet (PDF)

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SISA88DN

SiSA88DNwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK 1212-8 SingleD TrenchFET Gen IV power MOSFETD8D7 100 % Rg and UIS testedD65 Material categorization:for definitions of compliance please see www.vishay.com/doc?9991211APPLICATIONS2DSS3S DC/DC conversion4S1G Battery protection

Datasheet: SIRA88DP , SIRA96DP , SIS472BDN , SIS488DN , SISA01DN , SISA24DN , SISA66DN , SISA72DN , IRFB4110 , SISA96DN , SISB46DN , SISS27ADN , SISS27DN , SISS98DN , SIUD402ED , SIUD403ED , SIUD412ED .

History: 2N7002BK | DH1K1N10B | DH160P03V | PSMN5R9-30YL | BLP04N10-P | SI9435 | DH16N06

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