SISA96DN Datasheet. Specs and Replacement

Type Designator: SISA96DN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 478 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm

Package: POWERPAK-1212-8

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SISA96DN datasheet

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SISA96DN

SiSA96DN www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PowerPAK 1212-8 Single D TrenchFET Gen IV power MOSFET D 8 D Tuned for reducing transient spikes 7 D 6 100 % Rg and UIS tested 5 Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 1 2 S S 3 APPLICATIONS S D 4 S 1 G Synchrono... See More ⇒

Detailed specifications: SIRA96DP, SIS472BDN, SIS488DN, SISA01DN, SISA24DN, SISA66DN, SISA72DN, SISA88DN, IRFB4115, SISB46DN, SISS27ADN, SISS27DN, SISS98DN, SIUD402ED, SIUD403ED, SIUD412ED, SIZ320DT

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