SISA96DN Datasheet and Replacement
Type Designator: SISA96DN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 478 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
Package: POWERPAK-1212-8
SISA96DN substitution
SISA96DN Datasheet (PDF)
sisa96dn.pdf

SiSA96DNwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK 1212-8 SingleD TrenchFET Gen IV power MOSFETD8D Tuned for reducing transient spikes7D6 100 % Rg and UIS tested5 Material categorization:for definitions of compliance please seewww.vishay.com/doc?99912112SS3APPLICATIONSS D4S1G Synchrono
Datasheet: SIRA96DP , SIS472BDN , SIS488DN , SISA01DN , SISA24DN , SISA66DN , SISA72DN , SISA88DN , IRFP250N , SISB46DN , SISS27ADN , SISS27DN , SISS98DN , SIUD402ED , SIUD403ED , SIUD412ED , SIZ320DT .
History: NCE3080KA | IRL520LPBF | SIHD4N80E | KIA2806A | JSM6435 | KNB3306B | KML0D4P20E
Keywords - SISA96DN MOSFET datasheet
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History: NCE3080KA | IRL520LPBF | SIHD4N80E | KIA2806A | JSM6435 | KNB3306B | KML0D4P20E



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