All MOSFET. SISA96DN Datasheet

 

SISA96DN Datasheet and Replacement


   Type Designator: SISA96DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 478 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
   Package: POWERPAK-1212-8
 

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SISA96DN Datasheet (PDF)

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SISA96DN

SiSA96DNwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK 1212-8 SingleD TrenchFET Gen IV power MOSFETD8D Tuned for reducing transient spikes7D6 100 % Rg and UIS tested5 Material categorization:for definitions of compliance please seewww.vishay.com/doc?99912112SS3APPLICATIONSS D4S1G Synchrono

Datasheet: SIRA96DP , SIS472BDN , SIS488DN , SISA01DN , SISA24DN , SISA66DN , SISA72DN , SISA88DN , IRFP250N , SISB46DN , SISS27ADN , SISS27DN , SISS98DN , SIUD402ED , SIUD403ED , SIUD412ED , SIZ320DT .

History: AP2310GG | FHU630A | CP650 | 2SK2252-01S | BL9N90-A | DMP21D0UFB4-P | DMJ7N70SK3

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