All MOSFET. SIZ320DT Datasheet

 

SIZ320DT Datasheet and Replacement


   Type Designator: SIZ320DT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 17.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
   Package: POWERPAIR3X3
 

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SIZ320DT Datasheet (PDF)

 ..1. Size:362K  vishay
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SIZ320DT

SiZ320DTwww.vishay.comVishay SiliconixDual N-Channel 25 V (D-S) MOSFETsFEATURESPowerPAIR 3 x 3G2S2 8 TrenchFET Gen IV power MOSFETsS2 7S2 6 100 % Rg and UIS tested5S1/D2 Optimized Qgs/Qgs ratio improves switching(Pin 9)D1 characteristics1 Material categorization:2G13D1 for definitions of compliance please see114D1www.vishay.co

 9.1. Size:334K  vishay
 siz322dt.pdf pdf_icon

SIZ320DT

SiZ322DTwww.vishay.comVishay SiliconixDual N-Channel 25 V (D-S) MOSFETFEATURESPowerPAIR 3 x 3 TrenchFET Gen IV power MOSFETG2S2 8 High side and low side MOSFETs form optimizedS2 7combination for 50 % duty cycleS2 65 Optimized RDS - Qg and RDS - Qgd FOM elevatesS1/D2(Pin 9)efficiency for high frequency switchingD1 100 % Rg and UIS tested1

Datasheet: SISA96DN , SISB46DN , SISS27ADN , SISS27DN , SISS98DN , SIUD402ED , SIUD403ED , SIUD412ED , 2N7000 , SIZ322DT , SIZ346DT , SIZ988DT , SIZF914DT , SQ1421EDH , SQ1440EH , SQ1912EH , SQ1922EEH .

History: STB80NE03L-06T4 | SISA18ADN | SWF4N50K | SSF6670 | SRT10N047HTF | IRL3715L | NCE4003

Keywords - SIZ320DT MOSFET datasheet

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