FDD5810F085 Datasheet. Specs and Replacement
Type Designator: FDD5810F085 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 72 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
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FDD5810F085 substitution
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FDD5810F085 datasheet
fdd5810 f085.pdf
May 2010 FDD5810_F085 N-Channel Logic Level Trench MOSFET 60V, 36A, 27m Applications Features Motor / Body Load Control RDS(ON) = 22m Typ.), VGS = 5V, ID = 29A ABS Systems Qg(5) = 13nC (Typ.), VGS = 5V Powertrain Management Low Miller Charge Injection System Low Qrr Body Diode DC-DC converters and Off-line UPS UIS Capability (Single Pulse / Repetitive Pulse) Dis... See More ⇒
fdd5810.pdf
October 2007 FDD5810 N-Channel Logic Level Trench MOSFET 60V, 36A, 27m Applications Features Motor / Body Load Control RDS(ON) = 22m (Typ.), VGS = 5V, ID = 29A ABS Systems Qg(5) = 13nC (Typ.), VGS = 5V Powertrain Management Low Miller Charge Injection System Low Qrr Body Diode DC-DC converters and Off-line UPS UIS Capability (Single Pulse / Repetitive Pulse) Di... See More ⇒
fdd5810-f085.pdf
FDD5810-F085 N-Channel Logic Level Trench MOSFET 60V, 36A, 27m Applications Motor / Body Load Control Features ABS Systems RDS(ON) = 22m Typ.), VGS = 5V, ID = 29A Powertrain Management Qg(5) = 13nC (Typ.), VGS = 5V Injection System Low Miller Charge DC-DC converters and Off-line UPS Low Qrr Body Diode Distributed Power Architecture and VRMs UIS Capability (Single ... See More ⇒
Detailed specifications: FDD4243, FDD4243F085, FDD4685, FDD4685F085, FDD5353, FDD5612, FDD5614P, FDD5670, IRFB3206, FDD5N50, FDD5N50F, FDD5N50NZ, FDD5N50NZF, FDD5N50U, FDD5N53, FDD6530A, FDD6630A
Keywords - FDD5810F085 MOSFET specs
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MOSFET Parameters. How They Affect Each Other
History: FDD5612 | FQU3N50C
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