FDD5810F085 Datasheet and Replacement
Type Designator: FDD5810F085
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 72 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TO252 DPAK
FDD5810F085 substitution
FDD5810F085 Datasheet (PDF)
fdd5810 f085.pdf

May 2010FDD5810_F085N-Channel Logic Level Trench MOSFET 60V, 36A, 27m ApplicationsFeatures Motor / Body Load Control RDS(ON) = 22m Typ.), VGS = 5V, ID = 29A ABS Systems Qg(5) = 13nC (Typ.), VGS = 5V Powertrain Management Low Miller Charge Injection System Low Qrr Body Diode DC-DC converters and Off-line UPS UIS Capability (Single Pulse / Repetitive Pulse) Dis
fdd5810.pdf

October 2007FDD5810N-Channel Logic Level Trench MOSFET 60V, 36A, 27mApplicationsFeatures Motor / Body Load Control RDS(ON) = 22m (Typ.), VGS = 5V, ID = 29A ABS Systems Qg(5) = 13nC (Typ.), VGS = 5V Powertrain Management Low Miller Charge Injection System Low Qrr Body Diode DC-DC converters and Off-line UPS UIS Capability (Single Pulse / Repetitive Pulse) Di
fdd5810-f085.pdf

FDD5810-F085N-Channel Logic Level TrenchMOSFET 60V, 36A, 27m Applications Motor / Body Load ControlFeatures ABS Systems RDS(ON) = 22m Typ.), VGS = 5V, ID = 29A Powertrain Management Qg(5) = 13nC (Typ.), VGS = 5V Injection System Low Miller Charge DC-DC converters and Off-line UPS Low Qrr Body Diode Distributed Power Architecture and VRMs UIS Capability (Single
Datasheet: FDD4243 , FDD4243F085 , FDD4685 , FDD4685F085 , FDD5353 , FDD5612 , FDD5614P , FDD5670 , STP65NF06 , FDD5N50 , FDD5N50F , FDD5N50NZ , FDD5N50NZF , FDD5N50U , FDD5N53 , FDD6530A , FDD6630A .
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