SIZ322DT Datasheet. Specs and Replacement

Type Designator: SIZ322DT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 275 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00635 Ohm

Package: POWERPAIR3X3

SIZ322DT substitution

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SIZ322DT datasheet

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SIZ322DT

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SIZ322DT

SiZ320DT www.vishay.com Vishay Siliconix Dual N-Channel 25 V (D-S) MOSFETs FEATURES PowerPAIR 3 x 3 G2 S2 8 TrenchFET Gen IV power MOSFETs S2 7 S2 6 100 % Rg and UIS tested 5 S1/D2 Optimized Qgs/Qgs ratio improves switching (Pin 9) D1 characteristics 1 Material categorization 2 G1 3 D1 for definitions of compliance please see 1 1 4 D1 www.vishay.co... See More ⇒

Detailed specifications: SISB46DN, SISS27ADN, SISS27DN, SISS98DN, SIUD402ED, SIUD403ED, SIUD412ED, SIZ320DT, 2SK3878, SIZ346DT, SIZ988DT, SIZF914DT, SQ1421EDH, SQ1440EH, SQ1912EH, SQ1922EEH, SQ2319ADS

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