All MOSFET. SIZ988DT Datasheet

 

SIZ988DT Datasheet and Replacement


   Type Designator: SIZ988DT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: POWERPAIR6X5
 

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SIZ988DT Datasheet (PDF)

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SIZ988DT

SiZ988DTwww.vishay.comVishay SiliconixDual N-Channel 30 V (D-S) MOSFETsFEATURESPRODUCT SUMMARY TrenchFET Gen IV power MOSFETsVDS (V) RDS(on) () (MAX.) ID (A) Qg (TYP.) 100 % Rg and UIS tested0.0075 at VGS = 10 V 40 gChannel-1 30 6.9 nC Optimized Qgs/Qgs ratio improves switching0.0120 at VGS = 4.5 V 32 gcharacteristics0.0041 at VGS = 10 V 60Channel-2 3

Datasheet: SISS27DN , SISS98DN , SIUD402ED , SIUD403ED , SIUD412ED , SIZ320DT , SIZ322DT , SIZ346DT , K4145 , SIZF914DT , SQ1421EDH , SQ1440EH , SQ1912EH , SQ1922EEH , SQ2319ADS , SQ2361AEES , SQ3418AEEV .

History: NTP60N06L | HSM4204

Keywords - SIZ988DT MOSFET datasheet

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