SIZ988DT Datasheet. Specs and Replacement

Type Designator: SIZ988DT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: POWERPAIR6X5

SIZ988DT substitution

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SIZ988DT datasheet

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SIZ988DT

SiZ988DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY TrenchFET Gen IV power MOSFETs VDS (V) RDS(on) ( ) (MAX.) ID (A) Qg (TYP.) 100 % Rg and UIS tested 0.0075 at VGS = 10 V 40 g Channel-1 30 6.9 nC Optimized Qgs/Qgs ratio improves switching 0.0120 at VGS = 4.5 V 32 g characteristics 0.0041 at VGS = 10 V 60 Channel-2 3... See More ⇒

Detailed specifications: SISS27DN, SISS98DN, SIUD402ED, SIUD403ED, SIUD412ED, SIZ320DT, SIZ322DT, SIZ346DT, 2N7002, SIZF914DT, SQ1421EDH, SQ1440EH, SQ1912EH, SQ1922EEH, SQ2319ADS, SQ2361AEES, SQ3418AEEV

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.