All MOSFET. SIZF914DT Datasheet

 

SIZF914DT Datasheet and Replacement


   Type Designator: SIZF914DT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 23.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: POWERPAIR6X5F
 

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SIZF914DT Datasheet (PDF)

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SIZF914DT

SiZF914DTwww.vishay.comVishay SiliconixDual N-Channel 25 V (D-S) MOSFET with Schottky Diode FEATURES TrenchFET Gen IV power MOSFET SkyFET low side MOSFET with integrated Schottky G1 return/S1 pin for enhancing high side driving 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912VIN/D1APPLIC

Datasheet: SISS98DN , SIUD402ED , SIUD403ED , SIUD412ED , SIZ320DT , SIZ322DT , SIZ346DT , SIZ988DT , IRF1010E , SQ1421EDH , SQ1440EH , SQ1912EH , SQ1922EEH , SQ2319ADS , SQ2361AEES , SQ3418AEEV , SQ3419AEEV .

History: HSM2627 | SRT03N011L | SJMN250R80ZW | NDT452AP | IRFR2905Z | NP60N04PDK | IPN60R360P7S

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