SIZF914DT Datasheet. Specs and Replacement

Type Designator: SIZF914DT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 510 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: POWERPAIR6X5F

SIZF914DT substitution

- MOSFET ⓘ Cross-Reference Search

 

SIZF914DT datasheet

 ..1. Size:325K  vishay
 sizf914dt.pdf pdf_icon

SIZF914DT

SiZF914DT www.vishay.com Vishay Siliconix Dual N-Channel 25 V (D-S) MOSFET with Schottky Diode FEATURES TrenchFET Gen IV power MOSFET SkyFET low side MOSFET with integrated Schottky G1 return/S1 pin for enhancing high side driving 100 % Rg and UIS tested Material categorization for definitions of compliance please see www.vishay.com/doc?99912 VIN/D1 APPLIC... See More ⇒

Detailed specifications: SISS98DN, SIUD402ED, SIUD403ED, SIUD412ED, SIZ320DT, SIZ322DT, SIZ346DT, SIZ988DT, IRF9540N, SQ1421EDH, SQ1440EH, SQ1912EH, SQ1922EEH, SQ2319ADS, SQ2361AEES, SQ3418AEEV, SQ3419AEEV

Keywords - SIZF914DT MOSFET specs

 SIZF914DT cross reference

 SIZF914DT equivalent finder

 SIZF914DT pdf lookup

 SIZF914DT substitution

 SIZF914DT replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs