All MOSFET. SIZF914DT Datasheet

 

SIZF914DT Datasheet and Replacement


   Type Designator: SIZF914DT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 23.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: POWERPAIR6X5F
 

 SIZF914DT substitution

   - MOSFET ⓘ Cross-Reference Search

 

SIZF914DT Datasheet (PDF)

 ..1. Size:325K  vishay
 sizf914dt.pdf pdf_icon

SIZF914DT

SiZF914DTwww.vishay.comVishay SiliconixDual N-Channel 25 V (D-S) MOSFET with Schottky Diode FEATURES TrenchFET Gen IV power MOSFET SkyFET low side MOSFET with integrated Schottky G1 return/S1 pin for enhancing high side driving 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912VIN/D1APPLIC

Datasheet: SISS98DN , SIUD402ED , SIUD403ED , SIUD412ED , SIZ320DT , SIZ322DT , SIZ346DT , SIZ988DT , K4145 , SQ1421EDH , SQ1440EH , SQ1912EH , SQ1922EEH , SQ2319ADS , SQ2361AEES , SQ3418AEEV , SQ3419AEEV .

History: TSD5N60M | STB23NM50N | MSK7N80T | STS10DN3LH5 | APT6021SFLLG | TF212 | MMN4364DY

Keywords - SIZF914DT MOSFET datasheet

 SIZF914DT cross reference
 SIZF914DT equivalent finder
 SIZF914DT lookup
 SIZF914DT substitution
 SIZF914DT replacement

 

 
Back to Top

 


 
.