All MOSFET. SQ1440EH Datasheet

 

SQ1440EH Datasheet and Replacement


   Type Designator: SQ1440EH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT-363 SC-70-6
 

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SQ1440EH Datasheet (PDF)

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SQ1440EH

SQ1440EHwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 AEC-Q101 qualified dRDS(on) () at VGS = 10 V 0.120 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.150 Material categorization:ID (A) 1.7for definitions of compliance please see Configuration Single

Datasheet: SIUD403ED , SIUD412ED , SIZ320DT , SIZ322DT , SIZ346DT , SIZ988DT , SIZF914DT , SQ1421EDH , 5N60 , SQ1912EH , SQ1922EEH , SQ2319ADS , SQ2361AEES , SQ3418AEEV , SQ3419AEEV , SQ3425EV , SQ3426AEEV .

History: WMN07N80M3 | RJJ1011DPD | KI5905DC | IRHN7130 | TPA120R800A | SST80R1K3S

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