SQ1440EH MOSFET. Datasheet pdf. Equivalent
Type Designator: SQ1440EH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 1.7 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 4.4 nC
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 34 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: SOT-363 SC-70-6
SQ1440EH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQ1440EH Datasheet (PDF)
..1. Size:190K vishay
sq1440eh.pdf
sq1440eh.pdf
SQ1440EHwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 AEC-Q101 qualified dRDS(on) () at VGS = 10 V 0.120 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.150 Material categorization:ID (A) 1.7for definitions of compliance please see Configuration Single
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
