All MOSFET. SQ1922EEH Datasheet

 

SQ1922EEH MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQ1922EEH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 0.84 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 0.7 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: SOT-363 SC-70-6

 SQ1922EEH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQ1922EEH Datasheet (PDF)

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 sq1922eeh.pdf

SQ1922EEH SQ1922EEH

SQ1922EEHwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 20 V (D-S) 175 C MOSFETFEATURESSOT-363 TrenchFET power MOSFETSC-70 Dual (6 leads)S2 AEC-Q101 qualified4G2 100 % Rg tested5D1 Typical ESD protection: 800 V6 Material categorization: for definitions of compliance please see 3www.vishay.com/doc?99912D22G1D1 D21S1

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