SQ1922EEH Datasheet and Replacement
Type Designator: SQ1922EEH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.84 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 21 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: SOT-363 SC-70-6
SQ1922EEH substitution
SQ1922EEH Datasheet (PDF)
sq1922eeh.pdf

SQ1922EEHwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 20 V (D-S) 175 C MOSFETFEATURESSOT-363 TrenchFET power MOSFETSC-70 Dual (6 leads)S2 AEC-Q101 qualified4G2 100 % Rg tested5D1 Typical ESD protection: 800 V6 Material categorization: for definitions of compliance please see 3www.vishay.com/doc?99912D22G1D1 D21S1
Datasheet: SIZ320DT , SIZ322DT , SIZ346DT , SIZ988DT , SIZF914DT , SQ1421EDH , SQ1440EH , SQ1912EH , SPP20N60C3 , SQ2319ADS , SQ2361AEES , SQ3418AEEV , SQ3419AEEV , SQ3425EV , SQ3426AEEV , SQ3427AEEV , SQ3461EV .
History: RU55L18L
Keywords - SQ1922EEH MOSFET datasheet
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History: RU55L18L



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