SQ1922EEH Datasheet. Specs and Replacement

Type Designator: SQ1922EEH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.84 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 21 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: SOT-363 SC-70-6

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SQ1922EEH datasheet

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SQ1922EEH

SQ1922EEH www.vishay.com Vishay Siliconix Automotive Dual N-Channel 20 V (D-S) 175 C MOSFET FEATURES SOT-363 TrenchFET power MOSFET SC-70 Dual (6 leads) S2 AEC-Q101 qualified 4 G2 100 % Rg tested 5 D1 Typical ESD protection 800 V 6 Material categorization for definitions of compliance please see 3 www.vishay.com/doc?99912 D2 2 G1 D1 D2 1 S1 ... See More ⇒

Detailed specifications: SIZ320DT, SIZ322DT, SIZ346DT, SIZ988DT, SIZF914DT, SQ1421EDH, SQ1440EH, SQ1912EH, K3569, SQ2319ADS, SQ2361AEES, SQ3418AEEV, SQ3419AEEV, SQ3425EV, SQ3426AEEV, SQ3427AEEV, SQ3461EV

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