All MOSFET. SQ3585EV Datasheet

 

SQ3585EV MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQ3585EV
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.67 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 3.57 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 1.8 nC
   trⓘ - Rise Time: 15 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm
   Package: TSOP-6

 SQ3585EV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQ3585EV Datasheet (PDF)

 ..1. Size:263K  vishay
 sq3585ev.pdf

SQ3585EV SQ3585EV

SQ3585EVwww.vishay.comVishay SiliconixAutomotive N- and P-Channel 20 V (D-S) MOSFETFEATURESTSOP-6 Dual TrenchFET power MOSFETD24 AEC-Q101 qualifiedS15 100 % Rg and UIS testedD16 Material categorization:for definitions of compliance please see www.vishay.com/doc?999123G22D1 S2S21G1Top ViewG2PRODUCT SUMMARYG1N-CHANNEL P-CHA

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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