All MOSFET. SQ3585EV Datasheet

 

SQ3585EV Datasheet and Replacement


   Type Designator: SQ3585EV
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.67 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.57 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm
   Package: TSOP-6
 

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SQ3585EV Datasheet (PDF)

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SQ3585EV

SQ3585EVwww.vishay.comVishay SiliconixAutomotive N- and P-Channel 20 V (D-S) MOSFETFEATURESTSOP-6 Dual TrenchFET power MOSFETD24 AEC-Q101 qualifiedS15 100 % Rg and UIS testedD16 Material categorization:for definitions of compliance please see www.vishay.com/doc?999123G22D1 S2S21G1Top ViewG2PRODUCT SUMMARYG1N-CHANNEL P-CHA

Datasheet: SQ2319ADS , SQ2361AEES , SQ3418AEEV , SQ3419AEEV , SQ3425EV , SQ3426AEEV , SQ3427AEEV , SQ3461EV , 4435 , SQ3987EV , SQ3989EV , SQ4005EY , SQ4940AEY , SQ7414CENW , SQA401EJ , SQD40081EL , SQJ148EP .

History: SSP90R1K5S | SWD70N10V | SQM100N04-2M7 | 2N3460 | SSP65R360S2E | RD3L080SN | PV5G3EA

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