SQ3585EV Datasheet. Specs and Replacement
Type Designator: SQ3585EV
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.67 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3.57 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm
Package: TSOP-6
SQ3585EV substitution
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SQ3585EV datasheet
sq3585ev.pdf
SQ3585EV www.vishay.com Vishay Siliconix Automotive N- and P-Channel 20 V (D-S) MOSFET FEATURES TSOP-6 Dual TrenchFET power MOSFET D2 4 AEC-Q101 qualified S1 5 100 % Rg and UIS tested D1 6 Material categorization for definitions of compliance please see www.vishay.com/doc?99912 3 G2 2 D1 S2 S2 1 G1 Top View G2 PRODUCT SUMMARY G1 N-CHANNEL P-CHA... See More ⇒
Detailed specifications: SQ2319ADS, SQ2361AEES, SQ3418AEEV, SQ3419AEEV, SQ3425EV, SQ3426AEEV, SQ3427AEEV, SQ3461EV, 5N65, SQ3987EV, SQ3989EV, SQ4005EY, SQ4940AEY, SQ7414CENW, SQA401EJ, SQD40081EL, SQJ148EP
Keywords - SQ3585EV MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: JCS7N80CH
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