SQJ262EP Datasheet. Specs and Replacement

Type Designator: SQJ262EP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 212 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0355 Ohm

Package: SO-8

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SQJ262EP datasheet

 ..1. Size:382K  vishay
sqj262ep.pdf pdf_icon

SQJ262EP

SQJ262EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFETs FEATURESS PowerPAK SO-8L Dual Asymmetric TrenchFET power MOSFET AEC-Q101 qualified D1 100 % Rg and UIS tested Optimized for synchronous buck applications D2 Material categorization 1 for definitions of compliance please see S1 2 www.vishay.com/doc?99912 G1... See More ⇒

 9.1. Size:411K  vishay
sqj260ep.pdf pdf_icon

SQJ262EP

SQJ260EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFETs FEATURESS PowerPAK SO-8L Dual Asymmetric TrenchFET power MOSFET AEC-Q101 qualified D1 100 % Rg and UIS tested Optimized for synchronous buck applications D2 Material categorization 1 for definitions of compliance please see S1 2 www.vishay.com/doc?99912 G1 3... See More ⇒

Detailed specifications: SQ7414CENW, SQA401EJ, SQD40081EL, SQJ148EP, SQJ158EP, SQJ200EP, SQJ202EP, SQJ260EP, 4N60, SQJ407EP, SQJ409EP, SQJ414EP, SQJ416EP, SQJ418EP, SQJ420EP, SQJ433EP, SQJ446EP

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