All MOSFET. SQJ433EP Datasheet

 

SQJ433EP Datasheet and Replacement


   Type Designator: SQJ433EP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 72 nC
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 775 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0081 Ohm
   Package: SO-8
 

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SQJ433EP Datasheet (PDF)

 ..1. Size:214K  vishay
 sqj433ep.pdf pdf_icon

SQJ433EP

SQJ433EPwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -30 100 % Rg and UIS testedRDS(on) () at VGS = -10 V 0.0081 AEC-Q101 qualified cRDS(on) () at VGS = -4.5 V 0.0170 Material categorization: ID (A) -75for definitions of compliance please see Configuration Single

 9.1. Size:155K  vishay
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SQJ433EP

SQJ431EPwww.vishay.comVishay SiliconixAutomotive P-Channel 200 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 200DefinitionRDS(on) () at VGS = - 10 V 0.213 TrenchFET Power MOSFETRDS(on) () at VGS = - 6 V 0.221 AEC-Q101 QualifieddID (A) - 12 100 % Rg and UIS TestedConfiguration Single Complian

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FCPF260N65FL1

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