All MOSFET. SQJ446EP Datasheet

 

SQJ446EP Datasheet and Replacement


   Type Designator: SQJ446EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: SO-8
 

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SQJ446EP Datasheet (PDF)

 ..1. Size:217K  vishay
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SQJ446EP

SQJ446EPwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 AEC-Q101 qualified cRDS(on) () at VGS = 10 V 0.0050 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0075 Material categorization: ID (A) 60for definitions of compliance please see Configuration Singlewww

 9.1. Size:173K  vishay
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SQJ446EP

SQJ443EPwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.029 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.047 AEC-Q101 QualifieddID (A) - 40 100 % Rg and UIS TestedConfiguration Single Compliant t

Datasheet: SQJ262EP , SQJ407EP , SQJ409EP , SQJ414EP , SQJ416EP , SQJ418EP , SQJ420EP , SQJ433EP , 7N60 , SQJ454EP , SQJ457EP , SQJ464EP , SQJ474EP , SQJ476EP , SQJ479EP , SQJ570EP , SQJ860EP .

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