SQJ446EP MOSFET. Datasheet pdf. Equivalent
Type Designator: SQJ446EP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 46 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 48 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 430 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: SO-8
SQJ446EP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQJ446EP Datasheet (PDF)
sqj446ep.pdf
SQJ446EPwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 AEC-Q101 qualified cRDS(on) () at VGS = 10 V 0.0050 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0075 Material categorization: ID (A) 60for definitions of compliance please see Configuration Singlewww
sqj443ep.pdf
SQJ443EPwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.029 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.047 AEC-Q101 QualifieddID (A) - 40 100 % Rg and UIS TestedConfiguration Single Compliant t
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
