SQJ570EP Datasheet. Specs and Replacement

Type Designator: SQJ570EP

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SO-8

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SQJ570EP datasheet

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SQJ570EP

SQJ570EP www.vishay.com Vishay Siliconix Automotive N- and P-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET N-CHANNEL P-CHANNEL AEC-Q101 qualified VDS (V) 100 -100 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.0450 0.1460 Material categorization RDS(on) ( ) at VGS = 4.5 V 0.0580 0.2065 for definitions of compli... See More ⇒

Detailed specifications: SQJ433EP, SQJ446EP, SQJ454EP, SQJ457EP, SQJ464EP, SQJ474EP, SQJ476EP, SQJ479EP, 2N60, SQJ860EP, SQJ868EP, SQJ912BEP, SQJ914EP, SQJ946EP, SQJ956EP, SQJ958EP, SQJ990EP

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