All MOSFET. SQJ570EP Datasheet

 

SQJ570EP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQJ570EP
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SO-8

 SQJ570EP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQJ570EP Datasheet (PDF)

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 sqj570ep.pdf

SQJ570EP SQJ570EP

SQJ570EPwww.vishay.comVishay SiliconixAutomotive N- and P-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETN-CHANNEL P-CHANNEL AEC-Q101 qualifiedVDS (V) 100 -100 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.0450 0.1460 Material categorization:RDS(on) () at VGS = 4.5 V 0.0580 0.2065for definitions of compli

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